Design and fabrication of micromachined passive microwave filtering elements in CMOS technology

Milanović, V.; Gaitan, Michael; Bowen, E.D.; Tea, N. H.; Zaghloul, Mona

doi:10.1109/sensor.1997.635355

Cited by 9 publications

(6 citation statements)

References 14 publications

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“…Second, the measured attenuation constant of the coplanar waveguide before and after micromachining the wafer is presented. A coplanar waveguide suspended by a silicon dioxide membrane over a micromachined silicon wafer [32], [33] is shown in Figures 8.11(a) and (b). The line is fabricated in a commercial 2 m CMOS n-well process on a 460 m thick 11002 silicon wafer.…”

Section: Coplanar Waveguide Suspended By a Silicon Dioxide Membrane Omentioning

confidence: 99%

Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides

Simons

2001

Coplanar Waveguide Circuits, Components, and Systems

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CLOSED FORM EQUATIONS FOR CONVENTIONAL CPW ATTENUATION CONSTANTCoplanar waveguide (CPW) circuits fabricated using standard photolithography process on copper-clad soft plastic-like sheets have a conductor thickness t several times the skin depth . Typically this thickness t is on the order of 17 m, which is the result of rolling a half ounce of copper over an area of one square feet [1]. Hence, for deriving an expression for the CPW attenuation constant, the conductors are considered to be electrically very thick and with conductivity the same as that of bulk copper. For the case of thick conductors a simple closed form expression for CPW attenuation constant is derived in [2] using conformal mapping technique.In monolithic microwave integrated circuits the conductor patterns are formed by evaporating or by sputtering precious metal such as gold on the surface of a dielectric substrate. These deposition processes yield conducting films with thickness on the order of a micron. The thickness is then built up to about 2.5 m by an electroplating process. The conductor thickness t in this case is said to be thin and in some cases may be less than or equal to the skin depth at the operating frequency. When t -, the fields penetrate into the conductors and the conductivity inside the conductors can be accounted for by introducing a complex dielectric constant. The CPW attenuation constant for this case is determined using accurate full wave analysis, such as the modematching method [3]. The disadvantage of the mode-matching method is that it requires significant amount of computer resources to carry out the computations. However, closed form expressions that approximate the results of the mode-matching method are also available [4].Besides thickness the cross section of the CPW conductors in MMICs may deviate from the ideal rectangular shape. The shape is strongly dependent on the fabrication process involved. In most cases the shape would be a trapezoid with 60°or 70°angles. The CPW attenuation constant for this case is derived by the modified matched asymptotic expansion technique [5], [6]. In this technique an approximate current density in first assumed on the CPW conductors and an equation for the CPW attenuation constant is derived. This equation involves a contour integral. Instead of evaluating this integral out to the edge of the conductors where the fields are singular, the limits of the integral are taken at some distance just before the edge. This short length before the edge is defined as the stopping distance [6]. Once is determined for a given edge shape as a function of t/ , a closed form expression is derived for the CPW conductor loss in [6]. In the subsections that follow closed form equations based on the foregoing numerical methods as well as measurementbased design equations are presented, and the corresponding computed attenuation constant is compared with measured data.

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Section: Coplanar Waveguide Suspended By a Silicon Dioxide Membrane Omentioning

confidence: 99%

Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides

Simons

2001

Coplanar Waveguide Circuits, Components, and Systems

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“…Mit einem Glasträger lassen sich die kapazitiven Einflüsse und die Substratverluste erheblich minimieren. Für hochfrequente Systeme werden auf einem Glasträger Güten von Q = 20 und Resonanzfrequenzen von über 2 GHz erzielt [10]. Glasträger stellen jedoch einen erheblichen Kostenfaktor dar und erschweren eine Vollintegration des Mikrosystems.…”

Section: Die Isolationsschichtunclassified

Optimierung von Mikrospulen zur Versorgung autarker telemetrischer Mikrosysteme

Weser¹,

Binder²,

Rehfuss³

et al. 1999

tm - Technisches Messen

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Schlagwörter: Mikrospule, Güte, Mikrosystem Wenn die Anwendung von Batterien bei autarken Mikrosystemen Restriktionen unteriiegt, erfolgt die Energieversorgung durch die induktive Kopplung zweier Spulensysteme. Die verwendeten Mikrospulen (onchip coils) haben einen entscheidenden Einfluß auf den Schreib-und Leseabstand des Systems. Der Artikel beschreibt die Optimierungsparameter für Mikrospulen, die mit der 3D-Tiefenlithographie und galvanischer Abscheidung hergestellt werden. Der Einfluß von Gold und Kupfer als Spulenmaterial und die Verwendung einer geeigneten Isolationsschicht wird beschrieben. Der Einfluß des Mikrospulendesigns wird anhand eines Modells und an Messungen aufgezeigt. Optimization of on-chip coil for wireless microsystemsEnergy Transmission by inductive coupling of a pair of coils is used for wireless microsystems, when battery-operated microsystems are not desirable. The onchip coils affect the system 's read and write distances. This paper presents the optimization of coils manufactured by 3D UV depth lithography and electroplating. The effects of using copper rather than gold as coil material and the use of an optimum insulation layer are described. The influence of difl^erent on-chip coil designs is shown by modeling and by measurements.

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“…Although novel materials and advanced fabrication technologies, such as high-temperature superconductors (HTS), low-temperature cofired ceramics (LTCC), monolithic microwave integrated circuits (MMIC), microelectromechanic system (MEMS), and micromachine technology, have began to enable RF bandpass filter integration [3] [8] all of these are not the standard low cost material used by the semiconductor industry to build transceivers.…”

Section: Introductionmentioning

confidence: 99%

Design of integrated millimetre wave microstrip interdigital bandpass filters on CMOS technology

Yang

Skafidas

Evans

2007

2007 European Microwave Conference

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With communication systems designed for operation in the millimeter wave frequencies it is now possible to have most of the transceiver implemented on a single CMOS die. An important system component that is required to ensure regulatory compliance is the RF bandpass filter. Unfortunately to date RF bandpass filters have been difficult to integrate on CMOS because of filter size and undesirable performance due to the conductive substrate. In this paper a six step method for the design of integrated interdigital bandpass filters on CMOS is presented. The utility of the method outlined in the paper is demonstrated for an on-chip integrated mm-wave interdigital bandpass filter designed and fabricated on 0.13um bulk CMOS. The fabricated filter has a centre frequency of 55GHz and exhibits an insertion loss of -4.5 dB and a return loss of better than -13 dB. This band pass filter demonstrates the feasibility of building integrated RF transmit receive bandpass filters for the front-end of wireless systems operating in the millimeter wave band on bulk CMOS.

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Design and fabrication of micromachined passive microwave filtering elements in CMOS technology

Cited by 9 publications

References 14 publications

Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides

Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides

Optimierung von Mikrospulen zur Versorgung autarker telemetrischer Mikrosysteme

Design of integrated millimetre wave microstrip interdigital bandpass filters on CMOS technology

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