Design and implementation of gas sensor array based on fluorescence quenching detection using CMOS-MEMS process

Lee, Y.-C.; Cheng, Shyh-Wei; Cheng, Chao-Lin; Fang, Weileun

doi:10.1109/transducers.2017.7994138

Cited by 10 publications

(9 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among these, the photosensor is considered as one of the most significant devices because it enables the detection of objects and can monitor the interaction between objects and users via an optical signal. According to the indispensable roles of photosensors, they have been widely used and will be utilized in many applications, such as automotive, robot, mobile device, interactive display, smart home, and healthcare. − For the realization of commercially viable applications, the following conditions are highly required for photosensors: high performance, low power consumption, high transparency, flexibility, large-area applicability, and low fabrication cost. Therefore, an extensive research has been conducted to develop appropriate materials and structures for photosensors that satisfy those prerequisites.…”

Section: Introductionmentioning

confidence: 99%

Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection

Kang

Kim

Chung

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias illumination stress, enabled the detection of a wide range of visible light (400-700 nm). The optimal condition of the hydrogen-doped absorption layer (HAL) is fabricated at a hydrogen partial pressure ratio of 2%. As a result, the optimized a-IGZO phototransistor with the HAL exhibits a high photoresponsivity of 1932.6 A/W, a photosensitivity of 3.85 × 10, and a detectivity of 6.93 × 10 Jones under 635 nm light illumination.

show abstract

Section: Introductionmentioning

confidence: 99%

Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection

Kang

Kim

Chung

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…The principle of optical oxygen sensors is the oxygen-quenching effect of the fluorescence of the luminescent molecules (luminescent body) fixed in the matrix; thus, the choice of substrate material is also an important factor impacting the performance of the sensor. At present, many materials are used as matrixes, including silicone rubber [112], silica gel [113], sol–gels, and polymers [114,115], most of which have a high oxygen permeability, good mechanical and chemical stability, and excellent optical transparency [116,117,118,119,120]. Peng proposed a new method for the determination of dissolved oxygen using a porous optical fiber [121].…”

Section: Dissolved Oxygen Detection Technologiesmentioning

confidence: 99%

Review of Dissolved Oxygen Detection Technology: From Laboratory Analysis to Online Intelligent Detection

Wei

Jiao

et al. 2019

Sensors

142

View full text Add to dashboard Cite

Dissolved oxygen is an important index to evaluate water quality, and its concentration is of great significance in industrial production, environmental monitoring, aquaculture, food production, and other fields. As its change is a continuous dynamic process, the dissolved oxygen concentration needs to be accurately measured in real time. In this paper, the principles, main applications, advantages, and disadvantages of iodometric titration, electrochemical detection, and optical detection, which are commonly used dissolved oxygen detection methods, are systematically analyzed and summarized. The detection mechanisms and materials of electrochemical and optical detection methods are examined and reviewed. Because external environmental factors readily cause interferences in dissolved oxygen detection, the traditional detection methods cannot adequately meet the accuracy, real-time, stability, and other measurement requirements; thus, it is urgent to use intelligent methods to make up for these deficiencies. This paper studies the application of intelligent technology in intelligent signal transfer processing, digital signal processing, and the real-time dynamic adaptive compensation and correction of dissolved oxygen sensors. The combined application of optical detection technology, new fluorescence-sensitive materials, and intelligent technology is the focus of future research on dissolved oxygen sensors.

show abstract

“…As shown in figure 28(b), the ZnO nanorods layer was deposited using the hydrothermal method to connect the interdigitated electrodes (including the control and the floating electrodes) on the CMOS chip. Based on the IR or the fluorescence quenching detections, the optical type CMOS-MEMS gas sensors have also been demonstrated in [173][174][175].…”

Section: Other Sensing Typesmentioning

confidence: 99%

CMOS-MEMS technologies for the applications of environment sensors and environment sensing hubs

Lee

Hsieh

Lin

et al. 2021

J. Micromech. Microeng.

View full text Add to dashboard Cite

The booming growth in environmental conditions sensing and monitoring pushes the need of inexpensive environment sensors with small size and low power consumption. The outbreak of COVID-19 further increases the need for fast monitoring of environment conditions. The micro-electrical-mechanical-systems (MEMS) technologies are considered as promising solutions to realize the required environment sensors. The mature complementary metal-oxide-semiconductor (CMOS) process platforms available in many foundries can be extended to fabricate MEMS sensors to offer the advantage of relatively easier commercialization. Moreover, by leveraging the characteristics of CMOS process platforms, the integration of multiple sensors and sensing circuits to form a compact sensing system can also be achieved. This review paper will focus on introducing the miniaturized environmental sensing devices implemented and integrated using the CMOS-MEMS technologies. In general, the CMOS chips for environment sensing are firstly fabricated using the foundry-available CMOS processes, and then the post-CMOS micromachining processes are performed to implement the CMOS-MEMS environment sensors. This paper respectively reviews five different environment sensors (including the infrared, pressure (barometer), humidity/temperature, and gas sensors) using the CMOS-based MEMS technologies. The advantages and design concerns of sensors fabricated by different CMOS and post-CMOS processes are introduced and discussed. Moreover, the CMOS-MEMS environment sensing hub implemented through the monolithic integration of multiple environment sensors is also introduced.

show abstract

Design and implementation of gas sensor array based on fluorescence quenching detection using CMOS-MEMS process

Cited by 10 publications

References 12 publications

Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection

Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection

Review of Dissolved Oxygen Detection Technology: From Laboratory Analysis to Online Intelligent Detection

CMOS-MEMS technologies for the applications of environment sensors and environment sensing hubs

Contact Info

Product

Resources

About