Design and implementation of LNA for 2 to 6 GHz WiMax system

Her, Man-Long; Hsu, Hao-Chih; Lin, Hsin-Hung; Yuan, Tseng-Hsow; Chan, Shun-Ping

doi:10.1109/apcc.2009.5375600

Cited by 6 publications

(2 citation statements)

References 5 publications

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“…Her et al [18] have identified an amplifier with low noise for standard WiMAX (802.16e) with TSMC 0.18 µm RF CMOS process. The circuit is built with two-stage cascode LNA structures with fully integrated 2-6 GHz, using resistive shunt-feedback and simplifying the band-pass filter circuit to reach broad matching of the impedances input.…”

Section: Low Noise Amplifier Reviewmentioning

confidence: 99%

High frequency of low noise amplifier architecture for WiMAX application: A review

Ibrahim

Zulkifli

Ariffin

et al. 2021

IJECE

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The low noise amplifier (LNA) circuit is exceptionally imperative as it promotes and initializes general execution performance and quality of the mobile communication system. LNA's design in radio frequency (R.F.) circuit requires the trade-off numerous imperative features' including gain, noise figure (N.F.), bandwidth, stability, sensitivity, power consumption, and complexity. Improvements to the LNA's overall performance should be made to fulfil the worldwide interoperability for microwave access (WiMAX) specifications' prerequisites. The development of front-end receiver, particularly the LNA, is genuinely pivotal for long-distance communications up to 50 km for a particular system with particular requirements. The LNA architecture has recently been designed to concentrate on a single transistor, cascode, or cascade constrained in gain, bandwidth, and noise figure.

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Section: Low Noise Amplifier Reviewmentioning

confidence: 99%

High frequency of low noise amplifier architecture for WiMAX application: A review

Ibrahim

Zulkifli

Ariffin

et al. 2021

IJECE

View full text Add to dashboard Cite

show abstract

“…In the fully integrated two stages LNA, use the resistive shunt-feedback, simplified band-pass filter circuit to achieve wide input impedance matching [18,19]. The cascoded CMOS topology is widely used in LNA designing to achieve the maximu m gain.…”

Section: Input Matching Network 2 Main Transistor Section 3 Output mentioning

confidence: 99%

Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 μm CMOS Technology for IEEE Standard 802.11 b/g WLAN

Srivastava¹,

Kumar²

2012

IJISA

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Abstract-This paper presents the design of low noise amp lifier (LNA) at 2.45 GHz and integrated at 0.18 µm RF CM OS process technology. This type of LNA at 2.45 GHz is use in the Bluetooth receiver. The proposed method is useful to optimize noise performance and power gain while maintaining good input and output matching. The amplifier is designed to be used as first stage of a receiver for wireless communicat ion. The main aim o f designer is to achieve low noise figure with improved gain with the help of CMOS technology by using single stage n-MOS amp lifier. The simulation results show a forward gain of 14.0 d B, a noise-figure of 0.5 dB and stability factor is appro ximate unity, in wh ich the circuit operates at 14.2 mA drain current with supply voltage of 3.5 V and biasing voltage of 1.5 V.Index Terms-Advanced design system, Low noise amplifier, Input and output matching, RFIC, VLSI

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Design of Wideband Rectangular-Shaped Coupler with Virtual Short Stubs for Wireless Communication Applications

Ghazali

Seman

Rahim

et al. 2013

Wireless Pers Commun

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Design and implementation of LNA for 2 to 6 GHz WiMax system

Cited by 6 publications

References 5 publications

High frequency of low noise amplifier architecture for WiMAX application: A review

High frequency of low noise amplifier architecture for WiMAX application: A review

Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 μm CMOS Technology for IEEE Standard 802.11 b/g WLAN

Design of Wideband Rectangular-Shaped Coupler with Virtual Short Stubs for Wireless Communication Applications

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