Design and Performance Analysis of Symmetrical and Asymmetrical Triple Gate Dopingless Vertical TFET for Biorecognition

Wadhera, Tanu; Wadhwa, Girish; Bhardwaj, Tarun Kumar; Kakkar, Deepti; Raj, Balwinder

doi:10.1007/s12633-020-00686-w

Cited by 16 publications

(15 citation statements)

References 27 publications

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“…The cavity length (L c ) and cavity height (h c ) are selected according to the state of the art biosensors and they are in accordance with the biomolecule's size. [34][35][36][37][38][39] K ¼ 1 reects an empty cavity and the cavity lled with biomolecules (K > 1) shows a deviation in the device characteristics in comparison to the empty cavity, which has been utilized for the sensitivity analysis for different biomolecules.…”

Section: Resultsmentioning

confidence: 99%

“…The cavity length ( L c ) and cavity height ( h c ) are selected according to the state of the art biosensors and they are in accordance with the biomolecule’s size. 34–39…”

Section: Resultsmentioning

confidence: 99%

“…The result we are getting is very much in accordance with the existing state-of-the-art as included in ref. 34, 41 and 42. Tables 3 and 4 present the I ON , I OFF , and I ON / I OFF ratio for positively charged and negatively charged biomolecules of different dielectric constant values at different cavity lengths.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO₂ ferroelectric junctionless TFET biosensors

et al. 2022

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Section: Resultsmentioning

confidence: 99%

“…The cavity length ( L c ) and cavity height ( h c ) are selected according to the state of the art biosensors and they are in accordance with the biomolecule’s size. 34–39…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO₂ ferroelectric junctionless TFET biosensors

et al. 2022

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“…The material beta-phase gallium oxide (β-Ga 0 O 2 ) has grabbed much preference of the researchers in different applications such as photodetectors, Schottky barrier diodes, and power devices due to wide bandgap (4.7 eV), more breakdown strength (8 78 ), better electron mobility (180 0 / ), higher saturation velocity (∼2 × 10 7 cm/s ) and ability to be fabricated as a single-crystal substrate [1][2][3][4]. Moreover, a higher Figure-of-Merit (FOM) for (β-Ga 0 O 2 ) makes it preferable to other materials like Silicon Carbide (SiC) or Gallium Nitride (GaN).…”

Section: Introductionmentioning

confidence: 99%

Comparison of Analog Performance of AlN/β-Ga2O3 HEMT by Variation in Dielectric Materials

Chauhan

2021

Preprint

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In the present paper, a high electron mobility transistor based on β-Gα2O3 material (BGO-HEMT) with different dielectrics (Si3N4, Al2O3, and HfO2) at the interface of aluminum nitride (AlN) and the gate is demonstrated. The device has a 10nm AlN layer with 50 nm barrier width, 50nm gate-length, and a value of 5 nm as gate-to-barrier thickness.A highly doped n+ material with a wider gap in between ohmic contact-barrier layers reveals the proposed device's novel traits. The performance is computd in terms of transfer characteristic, transconductance, gate capacitance, 2nd, and 3rd order transconductance values. The proposed structure reduced the dynamic & access resistance and provided a high gm value equal to 0.15S/µm,drain current density value of 650 A/mm (maximum) at Vds= 5 V. In the future, the proposed device can be utilized in high power radio frequency and microwave applications.

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“…For implementing linearly graded work function, the binary metals molar fraction 'σ' value is gradually increased to have 100 % impact of metal 'A' at the source side with continuously decreasing effect towards the device drain side. Since it is an alloy composition, the other metal (Metal 'B') behavior is found opposite to that of Metal 'A," which means a 100 % impact over drain; however, a reducing impact while gradually moving to source domain [11,12]. The linear variation in the work function led to asymmetric distribution of potential value along the channel.…”

Section: Introductionmentioning

confidence: 99%

Novel Linearly Graded Nanotube Field-Effect Transistors for Improved Analog Performance and Reduced Leakage Current

Kumar

2021

Silicon

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In present work, a Linearly Graded (LG) work function is studied by considering the binary metal alloy A σ B 1−σ composition for the gate electrode. A high-k gate stack LG nanotube field-effect transistor (LG-NT-FET) is investigated for improving the analog performance and reduced leakage current. The present paper introduces novelty by adding charge plasma on the drain side while doping the source side in LG-NT-FET. The proposed device has the core gate, which lays inside the channel and drain area. Both the gates, including the inner and outer gates are playing a crucial role to significantly charge the channel of LG-NT-FET. It can significantly reduce the Short Channel Effects (SCEs) also. Evaluating the electrical performance metrics such as drive currents and SCEs of LG-NT-FET reveals that the proposed device can better perform in comparison with single gate silicon-based nanotube field-effect transistors (SG-NT-FETs). The device metrics get further enhanced with the tightened electrostatic control via stacking of the core-shell gate that enabled volume inversion-phase operation. The comparison of the LG-NT-FET with single gate NTFET offered a significant reduction in leakage current (~10 − 15 ), rise in I ON =I OFF ratio (~10 13 ), increase in transconductance and cutoff frequency as compared to the single gate SG-NT-FET. These improvements in electrical performance metrics enable the proposed device, LG-NT-FET, as a potential device to enable CMOS scaling criteria beyond the Si-NW-FET. These improvised characteristics make LG-NT-FET a promising device in designing both digitals and analog applications for FETs.

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Design and Performance Analysis of Symmetrical and Asymmetrical Triple Gate Dopingless Vertical TFET for Biorecognition

Cited by 16 publications

References 27 publications

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO₂ ferroelectric junctionless TFET biosensors

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO₂ ferroelectric junctionless TFET biosensors

Comparison of Analog Performance of AlN/β-Ga2O3 HEMT by Variation in Dielectric Materials

Novel Linearly Graded Nanotube Field-Effect Transistors for Improved Analog Performance and Reduced Leakage Current

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Design and Performance Analysis of Symmetrical and Asymmetrical Triple Gate Dopingless Vertical TFET for Biorecognition

Cited by 16 publications

References 27 publications

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO2 ferroelectric junctionless TFET biosensors

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO2 ferroelectric junctionless TFET biosensors

Comparison of Analog Performance of AlN/β-Ga2O3 HEMT by Variation in Dielectric Materials

Novel Linearly Graded Nanotube Field-Effect Transistors for Improved Analog Performance and Reduced Leakage Current

Contact Info

Product

Resources

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Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO₂ ferroelectric junctionless TFET biosensors

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO₂ ferroelectric junctionless TFET biosensors