Design and performance analysis of gate-all-around negative capacitance dopingless nanowire tunnel field effect transistor

Abstract

In this paper, a novel low power consumption device based on dopingless gate all around nanowire tunnel field effect transistor with negative capacitance effect is proposed. Negative capacitance is a robust approach in solving the bottleneck issues encountered by devices operating in nanoscale domains. Additionally, VT and SS are dropped significantly to less than 60mV/decade. Negative capacitance makes significant contribution to the device performance by lowering operating voltage for low power applications. To calculate the optimum bias, Landau-Khalatnikov (L-K) equation has been used. To evaluate the influence of negative capacitance, ferroelectric (FE) material PZT (lead zirconate titanate) – ceramic material which has perovskite properties has been used as gate insulator. Thus, gate all around dopingless nanowire TFET (GAA DL NW TFET) device structure is reconfigured into GAA negative capacitance DL NW TFET (GAA NC DL NW TFET). PZT has an appropriate polarization rate, high dielectric capacitance and high degree of reliability. To achieve SS lower than 60mV/decade at lower VT, effective tuning of FE thickness is critical to avoid hysteresis, which enhances the overall performance of the proposed device structure. Aggressively scaled device has the problem of fabrication complexity and its associated cost that is addressed with the help of doping-less technique to the nanowire based TFET. The enhancement of the on-state current at reduced supply voltage of silicon based TFET devices with improved steep subthreshold swing which has been addressed with the help of NC technique. With the application of NC technique, the proposed device showcased an improved 4 (µA/µm) of ION, 1012 of current ratio. Additionally, influence of variation in FE thickness (tFE) on performance parameters are examined. The proposed device structure, GAA NC DL NW TFET operates at minimum operating voltage than GAA DL NW TFET making it as an ideal choice for low power voltage applications

Design and sensitivity analysis of GAA nanowire dopingless FET based label free biosensor

“…Scaling MOSFETs became perilous as CMOS technology was scaled down to ever smaller nodes, causing MOS devices to encounter critical issues related to Short Channel Effects (SCEs) with poor gate control [12][13][14][15]. Advances in material-based technology that improve semiconductor devices by using graphene, plasmonic techniques, metamaterials, nanoparticles, and negative capacitance for improving materialistic properties such as energy bandgap controlling, quantum well introduction, and the production of ferroelectric domains for use in next generation ICs have piqued the interest of researchers in specific fields [16][17][18]. The charge plasma dopingless technique is renowned for keeping appropriate metal work functions for the source and drain regions in short-channel devices by eliminating doping [19].…”

Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier

“…Heavy doping has become a serious issue as it degrades the device’s performance. The issue raised by JL NW FETs can be addressed by a dopingless technique called charge plasma [ 14 , 15 ]. This dopingless concept has been applied to MOSFETs, Tunnel FETs (TFETs) and to GAA NW FETs [ 16 ].…”

The Impact of Hysteresis Effect on Device Characteristic and Reliability for Various Fin-Widths Tri-Gate Hf0.5Zr0.5O2 Ferroelectric FinFET

“…The reason Fe-FETs are able to overcome physical limitations is due to the negative capacitance property of the ferroelectric layer, which can display a subthreshold swing (SS) of less than 60 mV/decade through dipole switching and arrangement [2][3][4][5][6]. In comparison to conventional MOSFETs, a lower threshold voltage (V TH ) can be achieved for Fe-FETs with an ultrasteep SS, which leads to a reduction in the applied voltage (V DD ) for a given gate overdrive voltage (V G − V TH ) [7][8][9].…”