Design and realization of a very high-resolution FIB nanofabrication instrument

Giérak, J.; Septier, A.; Vieu, Christophe

doi:10.1016/s0168-9002(98)01541-1

Cited by 46 publications

(24 citation statements)

References 20 publications

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“…Figure 5 displays two examples of ion beam micromachined structures on (a) GaAs and (b) a multilayer sample of 50 nm thick AlF 3 on GaAs [40,41]. A large number of experiments have been performed to demonstrate the viability of the technique, including optical and X-ray msk repairing, quantum devices fabrication, scanning probe tip modification and, more recently, biomolecule microsurgery and analysis [42].…”

Section: Focused Ion Beam Lithographymentioning

confidence: 99%

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Nanofabrication: Conventional and nonconventional methods

2001

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Nanofabrication is playing an ever increasing role in science and technology on the nanometer scale and will soon allow us to build systems of the same complexity as found in nature. Conventional methods that emerged from microelectronics are now used for the fabrication of structures for integrated circuits, microelectro-mechanical systems, microoptics and microanalytical devices. Nonconventional or alternative approaches have changed the way we pattern very fine structures and have brought about a new appreciation of simple and low-cost techniques. We present an overview of some of these methods, paying particular attention to those which enable large-scale production of lithographic patterns. We preface the review with a brief primer on lithography and pattern transfer concepts. After reviewing the various patterning techniques, we discuss some recent application issues in the fields of microelectronics, optoelectronics, magnetism as well as in biology and biochemistry.

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Section: Focused Ion Beam Lithographymentioning

confidence: 99%

“…All mirrors are made of alternating molybdenum and silicon or beryllium multilayers that provide constructive interference in the direction of reflection. fine lines on a multilayer AlF 3 (50 nm thick)/GaAs, obtained by direct focused ion beam lithography [40,41].…”

Section: Extreme Uv Lithographymentioning

confidence: 99%

Nanofabrication: Conventional and nonconventional methods

2001

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“…Focused beams of electrons are widely applied in electron beam lithography (EBL, e-beam lithography) [1,2]. Focused beams of heavy ions are applied presently for creation of 3D nanodimensional components in FIB (focusing ion beam) devices [3,4] due to their capability to sputter the atoms of the processed sample. The beams of MeV-energy light ions were initially applied for the purpose of local element analysis of the substance in nuclear scanning microprobes.…”

Section: Introductionmentioning

confidence: 99%

Application of Focused Charge-Particle Beams of in Manufacturing of Nanocomponents

et al. 2010

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Application of focused beams of medium energy light ions, electrons and low energy heavy ions is considered for the technology of manufacturing of small-dimension components. Physical principles applied as the basis for interaction of the above beams with resistive materials are described. The proton beam lithography is considered as a new technology possessing high potential capabilities for various applications like micro-optics and nanoelectronics of terahertz wave band.

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“…The 10 nm spot size that can be achieved at present is mainly limited by chromatic aberrations associated with the 4.5 eV energy spread of the Ga-LMI. 8,9 Recently, the ultracold ion source ͑UCI͒ was proposed as an alternative for the LMI. [10][11][12] The UCI has the potential of producing ion beams with a reduced brightness and useable current comparable to the LMI, but with a much smaller energy spread, and may therefore provide us with a route toward 1-nm ion beam milling.…”

Section: Introductionmentioning

confidence: 99%

Simulated performance of an ultracold ion source

Geer

Reijnders

Loos

et al. 2007

Journal of Applied Physics

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At present, the smallest spot size which can be achieved with state-of-the-art focused ion beam ͑FIB͒ technology is mainly limited by the chromatic aberrations associated with the 4.5 eV energy spread of the liquid-metal ion source. Here we numerically investigate the performance of an ultracold ion source which has the potential for generating ion beams which combine high brightness with small energy spread. The source is based on creating very cold ion beams by near-threshold photoionization of a laser-cooled and trapped atomic gas. We present ab initio numerical calculations of the generation of ultracold beams in a realistic acceleration field and including all Coulomb interactions, i.e., both space charge effects and statistical Coulomb effects. These simulations demonstrate that with existing technology reduced brightness values exceeding 10 5 A m −2 sr −1 V −1 are feasible at an energy spread as low as 0.1 eV. The estimated spot size of the ultracold ion source in a FIB instrument ranges from 10 nm at a current of 100 pA to 0.8 nm at 1 pA.

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Design and realization of a very high-resolution FIB nanofabrication instrument

Cited by 46 publications

References 20 publications

Nanofabrication: Conventional and nonconventional methods

Nanofabrication: Conventional and nonconventional methods

Application of Focused Charge-Particle Beams of in Manufacturing of Nanocomponents

Simulated performance of an ultracold ion source

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