Design, fabrication and characterization of SiOx/SiON/SiO2/Si structures for passive optical waveguides realization

Chovan, Jozef; Figura, Daniel; Chlpík, Juraj; Lorenc, D.; Řeháček, V.; Uherek, F.

doi:10.1117/12.2295305

Cited by 2 publications

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“…This paper is focused on the deposition and characterization of SiON films using various process parameters to obtain the suitable waveguide core for low refractive index contrast SiON waveguides. Based on simulations done by Chovan et al [22], the goal is to deposit SiON films with a thickness of 2.5 µm and a refractive index of 1.6 for λ = 1.55 µm. The width of a SiON waveguide of 2.3 µm and the thickness of 2.5 µm are the largest dimensions the still maintain single-mode SiON waveguides [22] using the mentioned refractive index and wavelength.…”

Section: Introductionmentioning

confidence: 99%

“…Based on simulations done by Chovan et al [22], the goal is to deposit SiON films with a thickness of 2.5 µm and a refractive index of 1.6 for λ = 1.55 µm. The width of a SiON waveguide of 2.3 µm and the thickness of 2.5 µm are the largest dimensions the still maintain single-mode SiON waveguides [22] using the mentioned refractive index and wavelength.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of Fabrication Process for SiON/SiOx Films Applicable as Optical Waveguides

et al. 2021

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In this paper, the analysis of silicon oxynitride (SiON) films, deposited utilizing the plasma enhanced chemical vapor deposition (PECVD) process, for optical waveguides on silicon wafers is presented. The impact of N2O flow rate on various SiON film properties was investigated. The thickness and refractive index were measured by micro-spot spectroscopic reflectometry and confirmed by spectroscopic ellipsometry. The chemical composition of SiON films was analyzed using Secondary Ion Mass Spectrometry (SIMS). The surface roughness was analyzed using Atomic Force Microscopy (AFM). Increasing the N2O flow rate during deposition caused the deposition rate to increase and the refractive index to decrease. By changing the flow rate of gases into the chamber during the PECVD process, it is possible to precisely adjust the oxygen (O2) ratio and nitrogen (N2) ratio in the SiON film and thus control its optical properties. This was possibility utilized to fabricate SiON films suitable to serve as a waveguide core for optical waveguides with a low refractive index contrast.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%