2020
DOI: 10.1109/tcsi.2019.2954755
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Design, Implementation, and Experimental Verification of 5 Gbps, 800 Mrad TID and SEU-Tolerant Optical Modulators Drivers

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Cited by 12 publications
(16 citation statements)
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“…The current caused on a sensible node by an SEE can be modeled as a double exponential function [ 23 ] in Equation (5). In this work, the parameter model of Equation (6), which was taken from a previous high-frequency design we have done in the same technology [ 24 ], has been used: where τ 1 and τ 2 are the constant times of the double exponential shape and Q is the charge released in the silicon substrate during a particle strike, which corresponds to a particle LET (Linear Energy Transfer) between 5 and 60 Mev∙cm 2 /mg.…”
Section: Simulation’s Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The current caused on a sensible node by an SEE can be modeled as a double exponential function [ 23 ] in Equation (5). In this work, the parameter model of Equation (6), which was taken from a previous high-frequency design we have done in the same technology [ 24 ], has been used: where τ 1 and τ 2 are the constant times of the double exponential shape and Q is the charge released in the silicon substrate during a particle strike, which corresponds to a particle LET (Linear Energy Transfer) between 5 and 60 Mev∙cm 2 /mg.…”
Section: Simulation’s Resultsmentioning
confidence: 99%
“…As can be seen from the figure, the whole PLL occupies an area of about 0.09 mm 2 (the remaining area and pads are used for other designs not discussed in this paper). It is to be noted that the design of the pads is inherited from a previous design, where they were tested also with respect to resistance to radiation effects [ 24 ].…”
Section: Test Chipmentioning
confidence: 99%
“…A 30% voltage amplitude degradation with respect to the pre-irradiation value was observed [17]. In addition, a single event upset (SEU) analysis of the same circuit was carried out in [44], proving its HEP-level radiation-tolerance.…”
Section: Samplesmentioning
confidence: 93%
“…Inductors (L p ) have been realized with a differential layout with a central tap to save area. Further details about the circuit design and purely electrical measurement results can be found in [44].…”
Section: Proposed Driver Designmentioning
confidence: 99%
“…This work targets, as implementation technology, a commercial 65 nm CMOS from TSMC (Taiwan Semiconductor Manufacturing Company). This technology, thanks to its thin gate-oxide thickness, could be considered radiation hard up to few hundred Mrad TID levels, as proved in [ 5 ], and by us in previous designs of other high-speed circuits in [ 6 , 7 , 8 ]. To the best of the authors’ knowledge, in literature and market, there are not examples of rad-hard VCOs able to work at 6.25 GHz.…”
Section: Introductionmentioning
confidence: 88%