Design, implementation and measurement of a 120 GHz 10 Gb/s phase-modulating transmitter in 65 nm LP CMOS

Deferm, Noël; Reynaert, Patrick

doi:10.1007/s10470-013-0027-9

Cited by 16 publications

(10 citation statements)

References 18 publications

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“…The results are compared against previous published Dband and mm-wave differential and quadrature VCOs in table 2. (1) L(∆ f ) − 20log( f 0/∆ f · FT R/10) + 10log(P DC ) (2) Output buffers not included (3) Only core area The measurements in the previous section prove immunity against pulling by an external signal. To further test the performance of the presented frequency generator, it is also integrated together with a modulator, a power amplifier and a bondwire antenna.…”

Section: Measurementsmentioning

confidence: 91%

“…These systems certainly benefit from the high bandwidth that is available at mm-wave frequencies and thus can achieve high data rates even with simple modulation schemes. But nevertheless, also these systems are now evolving towards more complex quadrature modulation schemes like QPSK and QAM [2] [3] and thus require a quadrature mm-wave local oscillator (LO). Due to the small wavelengths, the integration of antennas on a silicon chip beAddress(es) of author(s) should be given comes feasible at these high frequencies [3] [4].…”

Section: Introductionmentioning

confidence: 99%

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A 120 GHz QVCO with 16.2 GHz tuning range resistent against VCO pulling in 45 nm CMOS

Volkaerts

Steyaert

Reynaert

2014

Analog Integr Circ Sig Process

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Frequency pulling of an oscillator integrated in a quadrature phase-shift keying (QPSK) wireless transmitter degrades the performance of the wireless system. This paper analyses the behavior of an oscillator in the presence of coupling between the oscillator and a power amplifier or antenna. Symbol switching in the modulator will cause frequency shifts in the oscillator at the modulation frequency. A new architecture for a 120 GHz quadrature frequency generator with large tuning range and immunity against PA-VCO coupling is presented. Combining the output signals of two independent oscillators, the pulling effect is removed and the frequency generator can be integrated with a PA and an antenna on the same chip. This architecture also makes quadrature generation with large tuning range feasible at 120 GHz. The chip is fabricated in a 45 nm CMOS technology and shows a tuning range of 16.2 GHz (13.5 %), a phase noise of -112 dBc/Hz @ 10 MHz offset and a phase error of 5 • [1].

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Section: Measurementsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

A 120 GHz QVCO with 16.2 GHz tuning range resistent against VCO pulling in 45 nm CMOS

Volkaerts

Steyaert

Reynaert

2014

Analog Integr Circ Sig Process

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“…The amplitude of the reflected signal can be calculated by using (2) as (15) where is the termination impedance at the IF output. Similarly, the I reference output is (16) By multiplying the reference and IF output signals and lowpass filtering, the baseband signal becomes (17) Equation (17) indicates that the baseband signal includes a dc component that depends on the leakage and a time-varying part that depends on the rotation speed of the reflector. Based on the simple model for , the strongest harmonic in the spectrum of the baseband signal will correspond to the rotation speed.…”

Section: ) Measurement Of Rotation Speedmentioning

confidence: 99%

“…short range radar, nondestructive testing with active imaging [12], and high data-rate point-to-point links [13]- [16].…”

mentioning

confidence: 99%

A Fundamental Frequency 120-GHz SiGe BiCMOS Distance Sensor With Integrated Antenna

Sarkas

Hasch

Balteanu

et al. 2012

IEEE Trans. Microwave Theory Techn.

108

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This paper describes the first fundamental frequency single-chip transceiver operating at -band. The low-IF monostatic transceiver integrates on a single chip two 120-GHz voltage-controlled oscillators (VCOs), a 120-GHz divide-by-64 chain, two in-phase/quadrature (IQ) receivers with phase-calibration circuitry, a variable gain transmit amplifier, an antenna directional coupler, a patch antenna, bias circuitry, a transmit power detector, and a temperature sensor. A quartz antenna resonator with 6-dBi gain and simulated 50% efficiency is placed directly above the on-chip patch to transmit and receive the 120-GHz signals. The circuit with the above-integrated-circuit antenna occupies an area of 2.2 mm 2.6 mm, consumes 900 mW from 1.2-and 1.8-V supplies, and was wire-bonded in an open-lid 7 mm 7 mm quad-flat no-leads package. Some transceiver performance parameters were characterized on the packaged chip, mounted on an evaluation board, while others, such as receiver noise figure and VCO phase noise at the 120-GHz output were measured on circuit breakouts. The AMOS-varactor VCOs have a typical phase noise of 100 dBc/Hz at 1-MHz offset and a tuning range of 115.2-123.9 GHz. The receiver gain and the transmitter output power are each adjustable over a range of 15 dB with a maximum transmitter output power of 3.6 dBm. The receiver IQ phase difference, measured at the IF outputs of the packaged transceiver, is adjustable from 70°to 110°, while the amplitude imbalance remains less than 1 dB. The receiver breakout gain and double-sideband noise figure are 10.5-13 and 10.5-11.5 dB, respectively, with an input compression point of 20.5 dBm. Several experiments were conducted through the air over distances of up to 2.1 m with a focusing lens placed above the packaged chip.Index Terms--band, distance sensor, Doppler radar, integrated antenna, in-phase/quadrature (IQ) receiver, 120-GHz transceiver, phase calibration circuit, radar sensor, SiGe BiCMOS.

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“…At 60 GHz, several high-performance wireless links have already been reported [1]- [3]. Even at higher frequencies, fully integrated mm-wave communication systems have been successfully designed and measured [4], [5].…”

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confidence: 99%

A 120 GHz Fully Integrated 10 Gb/s Short-Range Star-QAM Wireless Transmitter With On-Chip Bondwire Antenna in 45 nm Low Power CMOS

Deferm

Reynaert

2014

IEEE J. Solid-State Circuits

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In this paper, a fully integrated -band transmitter with on-chip dipole bondwire antenna implemented in 45 nm low-power CMOS is presented. The purpose of this 120 GHz wireless connector is to provide a high-speed short-range wireless communication link. On-chip frequency generation, insensitive to VCO pulling, is integrated together with a direct carrier quadrature vector modulator, ASK modulator, four-stage differential transformer-coupled power amplifier, and bondwire antenna. A -bit PRBS generator, capable of generating three parallel bit streams at a clock frequency of 8 GHz, is integrated on the same chip for measurement purposes. The transmitter is capable of efficiently generating BPSK, QPSK, and Star-QAM modulation formats. Data transmission over a distance up to 1 m is achieved for data rates as high as 2 Gb/s. For shorter distances, data rates up to 10 Gb/s are measured.Index Terms-CMOS, -band, 45 nm, millimeter-wave, on-chip antenna, RF front end, wireless connector.

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Design, implementation and measurement of a 120 GHz 10 Gb/s phase-modulating transmitter in 65 nm LP CMOS

Cited by 16 publications

References 18 publications

A 120 GHz QVCO with 16.2 GHz tuning range resistent against VCO pulling in 45 nm CMOS

A 120 GHz QVCO with 16.2 GHz tuning range resistent against VCO pulling in 45 nm CMOS

A Fundamental Frequency 120-GHz SiGe BiCMOS Distance Sensor With Integrated Antenna

A 120 GHz Fully Integrated 10 Gb/s Short-Range Star-QAM Wireless Transmitter With On-Chip Bondwire Antenna in 45 nm Low Power CMOS

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