2020 International Conference on UK-China Emerging Technologies (UCET) 2020
DOI: 10.1109/ucet51115.2020.9205487
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Design of 2 μm Wavelength Polarization Mode Controllers

Abstract: A single-slot waveguide for transverse electric (TE) to transverse magnetic (TM) mode conversion operating at wavelengths around 2 μm is proposed based on an InGaSb/AlGaAsSb quantum well structure. The polarization mode convertor has a deep-etched ridge waveguide and a single shallow-etched slot, and can be fabricated in a single stage of dry-etching. The dependence of polarization conversion efficiency on slot width, slot position, slot depth and waveguide length was investigated, and a design that was insens… Show more

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Cited by 2 publications
(2 citation statements)
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“…Given the growing number of LDs using a multi-quantum well (MQW) structure to enhance their efficiency, PMCs based on the MQW structure are desirable. Many PMCs have been reported based on different material systems, such as InGaAsP/InP [3], AlGaAs/GaAs [4], and AlGaAsSb/InGaSb [5]. However, most of these PMC devices are based on bulk material rather than MQW structures.…”
Section: Introductionmentioning
confidence: 99%
“…Given the growing number of LDs using a multi-quantum well (MQW) structure to enhance their efficiency, PMCs based on the MQW structure are desirable. Many PMCs have been reported based on different material systems, such as InGaAsP/InP [3], AlGaAs/GaAs [4], and AlGaAsSb/InGaSb [5]. However, most of these PMC devices are based on bulk material rather than MQW structures.…”
Section: Introductionmentioning
confidence: 99%
“…The crucial issue for MQW PMCs is the inherent birefringence of the MQW, which disturbs the optimal rotation of the SOP on the Poincaré sphere. Several different material systems and designs have been proposed for PMCs such as GaAs-AlGaAs [5] or InGaSb-AlGaAsSb [6] structures using the reactive ion-etch (RIE) lag phenomenon, InP-InGaAsP structures with a single-trench waveguide [7], angled-facet waveguides [8], two-step waveguides [9] and silicon nanowire PMCs with stepped height ridge waveguides [10], [11]. These PMC devices used bulk material as the core layer in the waveguide and combined a high PCE with a short waveguide length.…”
mentioning
confidence: 99%