2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS) 2013
DOI: 10.1109/icecs.2013.6815526
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Design of a class EF2 power oscillator for RF communication application

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Cited by 2 publications
(2 citation statements)
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“…This was achieved in this work. The feedback mechanism is similar to the capacitive feedback mechanism which was designed for Class-EF2 type RF PO except for parallel MOS varactor capacitor between the output node and ground [17]. Serial MOS varactor capacitance from the output through gate input of the nMOS transistor switch was used in this work.…”
Section: Power Amplifier (Pa) and Power Oscillator (Po) And Mixer Circuitsmentioning
confidence: 99%
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“…This was achieved in this work. The feedback mechanism is similar to the capacitive feedback mechanism which was designed for Class-EF2 type RF PO except for parallel MOS varactor capacitor between the output node and ground [17]. Serial MOS varactor capacitance from the output through gate input of the nMOS transistor switch was used in this work.…”
Section: Power Amplifier (Pa) and Power Oscillator (Po) And Mixer Circuitsmentioning
confidence: 99%
“…Combined RF PO based on the Class-E type RF PA circuit schematic is given in the next section. Transistor gate inductive coupled biasing was shown in the literature [17]. The same gate biasing methodology was applied in this work.…”
Section: Power Amplifier (Pa) and Power Oscillator (Po) And Mixer Circuitsmentioning
confidence: 99%