Design of a <i>C</i>-Band High Efficiency Power Amplifier With Compact Harmonic Control Network

Wen, Shengyou; He, Songbai; Shi, Weimin; Shen, Ce; Li, Chuan; Xiao, Zehua; You, Fei

doi:10.1109/lmwc.2021.3096251

Cited by 9 publications

(5 citation statements)

References 12 publications

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“…The overlaps between the voltage and current are minimized through the output harmonic manipulation methods, thus yielding harmonic controlled high efficiency PA performance. [1][2][3][4][5][6][7][8] Considering the reliability of the harmonic terminations and the influence of harmonic components, the second harmonic manipulation is more practical over other high order harmonic manipulation. [9][10][11][12][13] Second harmonic tuned (2HT) PAs with harmonic tuning matching network have been widely investigated.…”

Section: Introductionmentioning

confidence: 99%

“…GaN high‐electron‐mobility transistors (HEMTs) are superior to control harmonic components due to the small output capacitance. The overlaps between the voltage and current are minimized through the output harmonic manipulation methods, thus yielding harmonic controlled high efficiency PA performance 1–8 . Considering the reliability of the harmonic terminations and the influence of harmonic components, the second harmonic manipulation is more practical over other high order harmonic manipulation 9–13 .…”

Section: Introductionmentioning

confidence: 99%

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High efficiency GaN power amplifier with compact harmonic tuning network

Cai,

Gao,

Xue

et al. 2024

Micro & Optical Tech Letters

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One high efficiency second harmonic tuned (2HT) power amplifier (PA) with a compact multi‐harmonic tuning network is presented. The proposed design method can drive the third harmonic impedance to short‐circuit condition to achieve an ideal 2HT PA operation. Then the second harmonic impedance is controlled to proper position to improve the PA efficiency. Meanwhile, the fundamental impedance is also transferred to 50 Ω load by making the most of this tuning network. Consequently, the proposed output network can be designed to a compact size and is suitable for high frequency PA applications. For demonstration, a PA using Cree CGH40010 GaN high‐electron‐mobility transistor is designed and fabricated at 3.5 GHz. The measured results show that the PA achieves peak power added efficiency of 72.8%, output power of 41.3 dBm and drain efficiency of 80.2% at 3.3 GHz.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High efficiency GaN power amplifier with compact harmonic tuning network

Cai,

Gao,

Xue

et al. 2024

Micro & Optical Tech Letters

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“…However, in refs. [5][6][7][8][9], the measured peak gains around passbands drop rapidly, leading to limited passband bandwidths. To deal with these problems, a DB-PA operating at 1.4 and 2.4 GHz with 150 MHz absolute bandwidths has been proposed in ref.…”

Section: Introductionmentioning

confidence: 99%

“…[4], the X‐parameters model based on the polyharmonic distortion is utilised to design wideband PA with the FBW of 100.0%. Moreover, the DB‐PAs are reported based on T‐shaped network [5], double‐sided parallel strip line [6], real frequency and simplified real frequency technique [7], sub‐optimal matching structure [8] and tunable load matching circuit [9]. However, in refs.…”

Section: Introductionmentioning

confidence: 99%

Dual‐band filtering power amplifier with extended passband bandwidths and wide stopband rejection

Dong

Yang

Fang

et al. 2023

IET Microwaves Antenna & Prop

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This article presents a dual‐band filtering power amplifier (DB‐FPA) with extended passband bandwidths and wide stopband rejection, which is helpful in reducing the number of microwave components in the dual‐band radio frequency front end, resulting in compact circuit size and low loss. In the designed DB‐FPA, a wideband low‐pass filter is applied as the input matching network (IMN) to provide wideband impedance matching and good stopband rejection, while a dual‐band filtering impedance transformation is adopted as the output matching network (OMN) to provide dual‐band impedance matchings and filtering responses simultaneously. Specifically, the IMN is constructed by high‐impedance transmission‐line sections and low‐impedance open‐circuit stubs. The OMN is designed based on the specific external quality factors and coupling coefficients during two bands, resulting in dual‐band impedance transformations and dual‐band filtering responses. Then, based on the above IMN and OMN, the design procedure of the presented DB‐FPA is summarised. To verify the proposed idea, a novel DB‐FPA has been fabricated and measured. During the two frequency bands, the measured maximum power added efficiencies are 55.11% and 47.78% within 33.0 dBm input power, while the measured peak gains are 15.4 and 14.0 dB within 15.0 dBm input power.

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“…Microwave power amplifiers are key devices that utilize AlGaN/GaN high-electron-mobility transistors (HEMTs) [1][2][3][4][5][6][7][8][9][10][11][12][13]. Amplifier distortion becomes critical because wideband and multivalue linear modulation is used to achieve high speed and large capacity in modern wireless communication.…”

Section: Introductionmentioning

confidence: 99%

Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

Moriwaki

Hara

2022

IEICE Electron. Express

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In this paper, we compare the distortion and power characteristics between AlGaN/GaN high-electron-mobility transistors (HEMTs) with different epi-structures. Third-order intermodulation distortion (IM3) measurement evaluates distortion characteristics, and on-wafer load and source-pull measurements evaluate the power performance. The results show that the AlGaN/GaN HEMTs directly fabricated on GaN substrates without nucleation layer perform better than those fabricated on SiC substrates. Furthermore, the distortion performance is compared with and without field plate.

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Design of a C-Band High Efficiency Power Amplifier With Compact Harmonic Control Network

Cited by 9 publications

References 12 publications

High efficiency GaN power amplifier with compact harmonic tuning network

High efficiency GaN power amplifier with compact harmonic tuning network

Dual‐band filtering power amplifier with extended passband bandwidths and wide stopband rejection

Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

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