Design of a wideband multi-standard antenna switch for wireless communication devices

Marian, Vlad; Verdier, Jacques; Allard, Bruno; Vollaire, Christian

doi:10.1016/j.mejo.2011.01.005

Cited by 2 publications

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Suppose the width of the FETs in the series and the shunt branch are w and βw separately, then the R on and C o f f of shunt branch are R on /β and βC o f f . The IL is given in (4) and is simplified as (5). The k 2 is neglectable compared to (2Z 0 + R on ) because C o f f is smaller than 100fF.…”

Section: Reduced Time Constant 231 Analysis Of Il and Isomentioning

confidence: 99%

“…To improve the power capacity of switches, [1-3] adopted a floating-body structure in the CMOS process, a resistor is added between the ground and the body terminal of the transistor, The results in [4] show that the P1 dB of the floating-body switch is 5 dB better than that of the traditional one. Similarly, [5] adopted the same structure in the SOI process, but the resistor is not needed because of the resistance of the BOX layer in large. The LC tuning technique is used in [6] to improve the power handling capacity by reducing the parasitic capacitance of transistors, but the frequency of the switch is limited.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A High Performance 0.18 μm RF Switch for Multi-Standard

Liang

Yebing²

2022

Electronics

View full text Add to dashboard Cite

This paper proposes a stacked field-effect transistor (FET) single-pole, double-throw (SPDT) RF switch which is capable of multi-standard. Negative voltage generator (NVG), logic controller, level shifter, and RF Switch branches are integrated. A PMOS self-biased strategy is proposed to improve linearity and simplify the design of the logic controller and level shifter. In order to reduce the influence of NVG, a new charge pump (CP) is proposed, and a low pass filter (LPF) is added to stabilize bias voltages. A new layout of the switch FET is proposed to minimize the product of on-state resistance and off-state capacitance (time constant). The RF switch proposed in this paper was implemented in the 0.18 μm silicon on insulator (SOI) process. The measured results show the P1 dB of 40 dBm, and the isolation (ISO) and insert loss (IL) at 1 GHz/5 GHz of 37 dB/ 22 dB, and 0.36 dB/0.55 dB. The operating frequency range is DC-6 GHz. Supply current is 37uA with the supply voltage of 2.6V.

show abstract

Section: Reduced Time Constant 231 Analysis Of Il and Isomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A High Performance 0.18 μm RF Switch for Multi-Standard

Liang

Yebing²

2022

Electronics

View full text Add to dashboard Cite

show abstract

A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

Zhang

et al. 2018

Circuit Theory & Apps

View full text Add to dashboard Cite

A low-loss high-power single-pole 8-throw antenna switch adopting body self-adapting bias technique in a 0.18-μm thick-film partially depleted silicon-on-insulator complementary metal-oxide-semiconductor process is implemented for multimode multiband cellular applications. A topology with symmetric port design is developed. We employ the body-contacted field-effect transistor to handle high power level and obtain low harmonic distortion. However, the conventional bias method for body-contacted field-effect transistor leads to poor insertion loss (IL), serious imbalanced voltage division, and large die size. Therefore, a new body self-adapting bias scheme is adopted to improve the IL and power handling capability with die area reward by removing the employment of extra biasing resistor and voltage supply at the body. The presented silicon-on-insulator antenna switch utilizing the new body bias strategy reveals similar harmonic performance as a conventional switch version, thanks to the analogous DC bias to the gate and body, while it exhibits effectively lower IL, imbalanced voltage division, and die area. The measured IL and 0.1-dB compression point (P −0.1dB ), at 1.9/2.7 GHz, are roughly 0.52/0.82 dB and 39.2/36.9 dBm, respectively. The overall IL and P −0.1dB are apparently improved by approximately 0.05 to 0.13 dB and 0.5 to 0.8 dBm compared with the conventional version.

show abstract

Design of a wideband multi-standard antenna switch for wireless communication devices

Cited by 2 publications

References 12 publications

A High Performance 0.18 μm RF Switch for Multi-Standard

A High Performance 0.18 μm RF Switch for Multi-Standard

A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

Contact Info

Product

Resources

About