Design of an atomic layer deposition reactor for hydrogen sulfide compatibility

Dasgupta, Neil P.; Mack, James F.; Langston, Michael C.; Bousetta, Al; Prinz, Fritz B.

doi:10.1063/1.3384349

Cited by 60 publications

(55 citation statements)

References 22 publications

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“…The tool was modified for compatibility with the corrosive gas. 32 ) The H 2 S was delivered to the manifold through a 0.3 mm orifice (Lenox Laser) with a delivery pressure of −710 Torr gauge pressure. The pulsing sequence was similar to that for TMA/H 2 O, where here t 1 = DEZ pulse time, t 3 is the H 2 S pulse time, and t 2 and t 4 are the purge times for the DEZ and H 2 S, respectively.…”

Section: A Ald Reactor Conditionsmentioning

confidence: 99%

Design and implementation of an integral wall-mounted quartz crystal microbalance for atomic layer deposition

Riha

Libera

Elam

et al. 2012

Review of Scientific Instruments

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Quartz crystal microbalance (QCM) measurements have played a vital role in understanding and expediting new atomic layer deposition (ALD) processes; however, significant barriers remain to their routine use and accurate execution. In order to turn this exclusively in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of chemical vapor deposition (CVD) tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the utility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.

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Section: A Ald Reactor Conditionsmentioning

confidence: 99%

Design and implementation of an integral wall-mounted quartz crystal microbalance for atomic layer deposition

Riha

Libera

Elam

et al. 2012

Review of Scientific Instruments

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“…An appropriate reactor design for H 2 S compatibility can be found elsewhere. 19 The partial pressures of Sn(amd) 2 and H 2 S after injecting into the deposition zone for each pulsed-CVD cycle are approximately 100 mTorr and 240 mTorr, respectively. Sb 2 S 3 thin films can be prepared from ALD using the reaction of tris(dimethylamido)antimony(III) [Sb(NMe 2 ) 3 ] (SigmaAldrich) and hydrogen sulfide (H 2 S).…”

Section: Methodsmentioning

confidence: 99%

Antimony-Doped Tin(II) Sulfide Thin Films

et al. 2012

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Thin-film solar cells made from earth-abundant, inexpensive, and non-toxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. 1 Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and non-toxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. This paper reports doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony (~1%) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations (~5%) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony-sulfur bonds found in films with lower concentrations of antimony.

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“…Hydrogen sulfide (H2S), largely produced in oil and gas exploitation, has attracted great attention focused on its efficient removal because of its corrosive properties and high toxicity (LC50 approximately 500 ppm). [1][2][3] H2S is largely produced in the hydrodesulfurization process of heavy oil during exploitation, in which hydrogen (H2) is consumed. 4 On the other hand, from the standpoint of sustainable energy production, H2S is regarded as a good resource resulting from its special elemental composition.…”

Section: Introductionmentioning

confidence: 99%

Highly dispersed PdS preferably anchored on In2S3 of MnS/In2S3 composite for effective and stable hydrogen production from H2S

Doronkin

et al. 2019

Journal of Catalysis

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As an important byproduct during natural gas exploitation, green utilization of hydrogen sulfide (H2S) by photocatalysis has offered us the possibility for production of clean hydrogen (H2) from H2S with low energy consumption. In this work, we have successfully introduced well-dispersed palladium sulfide (PdS) which is preferably loaded on In2S3 of MnS/In2S3 composite for improved photocatalytic hydrogen evolution from H2S aqueous solution. In contrast to binary MnS/In2S3, ternary MnS/In2S3/PdS has exhibited a remarkable and stable hydrogen production rate of 22.7 mmol g-1 h-1 with an apparent quantum yield of 34 % at around 395 nm. A comprehensive structure characterization of the ternary composite including scanning transmission electron microscopy (STEM) and X-ray absorption spectroscopy (XAS) in combination with theoretical calculations confirm the good dispersion of PdS in the composite. Moreover, we discovered that PdS preferably interact with In2S3 rather than MnS in the composite through Pd-SIn bond on the interface of the two. Photoluminescence (PL) spectra, surface photovoltage (SPV) spectra together with transient photocurrent and electrochemical impedance spectra (EIS) demonstrate the advantage of PdS for promoting the charge separation. Due to the corrosion-resistant nature of PdS in H2S-rich reaction media, MnS/In2S3/PdS present good stability as well. This work sheds light on the positive effect on the enhanced activity and stability of the corresponding system resulting from the preferable anchoring of highly dispersed PdS on In2S3 in the composite by chemical Pd-SIn bond. Not only the high dispersion but also the preferable anchoring of the cocatalyst in the composite could hence inspire people for more rational designs of ternary composite in future.

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Design of an atomic layer deposition reactor for hydrogen sulfide compatibility

Cited by 60 publications

References 22 publications

Design and implementation of an integral wall-mounted quartz crystal microbalance for atomic layer deposition

Design and implementation of an integral wall-mounted quartz crystal microbalance for atomic layer deposition

Antimony-Doped Tin(II) Sulfide Thin Films

Highly dispersed PdS preferably anchored on In2S3 of MnS/In2S3 composite for effective and stable hydrogen production from H2S

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