Design of Analysis Platform Used for Studying Soft Error Characteristic of 3D SRAM

Li, Peng; Zhang, Minxuan; Deng, Quan

doi:10.2991/amcce-15.2015.304

Cited by 4 publications

(3 citation statements)

References 7 publications

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“…Several pieces of research have been conducted to investigate the soft error caused by the radiation effect. Li et al and Mahyuddin et al introduced a strike at the circuit node with a transient current source to emulate SEU [ 2 ]. Similarly, the SEU effect in III-V Hetero-junction TFET, III-V FinFET and Si FinFET have been investigated using circuit simulation [ 3 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Adesina

2023

Micromachines

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In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics, especially in VLSI. This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a metal-oxide semiconductor type graphene nano-ribbon field effect transistor (MOS-GNRFET) and compares the results with another SRAM cell designed using a PTM 10 nm FinFET node. Our simulations show that there is a change in the data stored in the SRAM after a heavy ion strike. However, it recovers from radiation effects after 0.46 ns for GNRFET and 0.51 ns for FinFET. Since the degradation observed in Q and Qb of GNRFET SRAM are 2.7X and 2.16X as compared to PTM nano-MOSFET, we can conclude that GNRFET is less robust to single effect upset. In addition, the stability of SRAM is improved by increasing the supply voltage VDD.

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Section: Introductionmentioning

confidence: 99%

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Adesina

2023

Micromachines

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“…In a radiation environment such as space, radiation particle (e.g., alpha particles, protons, neutrons, or other heavy ions) causes a decrease in critical charge and capacitance of SRAM, thus more susceptible to Single Event Upset (SEU) [1]. An electron-hole pair is generated along the path of a charged particle in a [2]. Similarly, the SEU effect in III-V Hetero-junction TFET, III-V FinFET and Si FinFET are investigated using circuit simulation [3].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Single Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Adesina¹

2023

Preprint

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In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics especially in VLSI. This study analyzes the effect of single event upset (SEU) in SRAM cell which employs metal-oxide semiconductor type graphene nano-ribbon field effect transistor (MOS-GNRFET) and compares the results respectively with another SRAM cell designed in PTM 10nm FinFET node. Our simulation show there is a change in data stored in the SRAM after heavy ion strike. However, it recovers from radiation effects after 0.46 ns for GNRFET and 0.51 ns for FinFET. Since the degradation observed in Q and Qb of GNRFET SRAM are 2.7X and 2.16X as compared to PTM nano-MOSFET, we can conclude that GNRFET is less robust to single effect upset. In addition, the stability of SRAM can be improved by increasing the supply voltage VDD.

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“…The collected charge (Q coll ) of electron-hole pair can change the state of the memory cell, register, latch or flip flops, only if it is greater than the critical charge (Q crit ), which is the minimum charge required to trigger a change in the data state [1], [2]. Simulation of SEU can be performed with either the circuit simulators such as SPICE [3]- [5], or drift-diffusion finite element device simulators [6]- [8]. Circuit simulators have the advantage of being computationally efficient than device simulators.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset

Pown

Lakshmi

2020

IEEE J. Electron Devices Soc.

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This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed. The conventional 6T TFET SRAM cell is designed using DG TFET of 30 nm. For the circuit simulation, the symbol of DG TFET is developed with the help of a look-up table based Verilog-A code. The radiation induced single event upset (SEU) causes a change in the stored data of SRAM cell. In order to improve the SEU sensitivity, the radiation hardening-by-design technique (RHBD) is introduced in 6T TFET SRAM cell by connecting the RC feedback loop between the two cross coupled inverters. The standby power of the TFET SRAM cell is calculated and compared before and after the radiation mitigation technique insertion.

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Design of Analysis Platform Used for Studying Soft Error Characteristic of 3D SRAM

Cited by 4 publications

References 7 publications

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Investigation of Single Event Upset in Graphene Nano-Ribbon FET SRAM Cell

Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset

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