Design of Bulk Fin-Type Field-Effect Transistor Considering Gate Work-Function

Han, Kyoung-Rok; Choi, Byung−Kil; Kwon, Hyuck‐In; Lee, Jong-Ho

doi:10.1143/jjap.47.4385

Cited by 10 publications

(7 citation statements)

References 15 publications

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“…Thus, engineering the work function of gate materials and maintaining a nearly intrinsic channel has been found more desirable. A method to suppress the earlier conduction of the corners in the bulk-FinFETs and to achieve a reasonable threshold voltage control with low leakage currents, without increasing the body doping has been proposed by K.-R. Han, et al [6]. It has been observed that by increasing the top gate work-function at a fixed side gate work-function of bulk FinFET, threshold voltage increases and off-state leakage current (I off ) reduces significantly without increasing doping concentration of fin body.…”

Section: Introductionmentioning

confidence: 99%

Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology

Mustafa¹,

Bhat²,

Beigh³

2013

WJNSE

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This paper investigates the threshold voltage sensitivity to metal gate work-function for n-channel double gate fin field-effect transistor (FinFET) structures and evaluates the short channel performance of the device using threshold voltage dependence on metal gate work-function analysis. We carried out the study for a double gate n-channel fin field-effect transistor (n-FinFET) with parameters as per the projection report of International Technology Roadmap for Semiconductors, ITRS-2011 for low standby power (LSTP) 20 nm gate length technology node. In the present study device simulation have been carried out using PADRE simulator from MuGFET, which is based on the drift-diffusion theory. Our results show the accuracy and validity of classical drift-diffusion simulation results for transistor structures with lateral dimensions 10nm and above. The subthreshold behavior of device improves with increased metal gate work-function. The results also show that a higher gate work-function (≥5 eV) can fulfill the tolerable off-current as projected in ITRS 2011 report. The SCE in FinFET can reasonably be controlled and improved by proper adjustment of the metal gate work-function. DIBL is reduced with the increase in gate work function.

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Section: Introductionmentioning

confidence: 99%

Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology

Mustafa¹,

Bhat²,

Beigh³

2013

WJNSE

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“…The on/off current obtained from the device simulation has been found to improve significantly with increase in metal gate work function of MOSFET [6]. The on current of the device can be reduced to some extent with an increased gate work function, but an increase in on/off current ratio is a clear indication of overall improvement in drive current with a required low off state leakage current for LSTP technology.…”

Section: Impact Of Work-function On On/off Ratiomentioning

confidence: 93%

Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs

Nitin¹,

Vashishath²,

Bansal³

2017

J. Nano- Electron. Phys.

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Prior to the fabrication of Integrated circuits, the electrical parameters are analytically modeled & simulated using any computer aided design tool. The ever increasing demand of the features of the electronic appliances has forced to put more and more transistors in a small IC chip. The main target of the integrated circuit design and fabrication is to achieve more functionality at higher speed using less power, less area and low cost. Various parameters like threshold voltage, sub-threshold leakage current and subthreshold slope etc. are analytically derived and simulated to get match with each other. In this paper, 45 nm n-channel metal-oxide-semiconductor field effect transistor (NMOS) has been designed in SILVA-CO tool to give low off state leakage current by increasing the work function of gate.

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“…[8][9][10][11][12][13] Considering the variability problem of threshold voltage owing to the random dopant fluctuation in the doped channel, the back-gate bias is one of the unique features of devices for the ultimate tuning of threshold voltage even after the device has been fabricated. 14,15 The effects of back-gate bias voltage on the threshold voltage of FD SOI MOSFETs have been studied in detail. [16][17][18][19][20][21] Yang et al 16 have reported a novel SOI technology called fully depleted silicon-on-insulator-with-active substrate (SOIAS) MOSFET structure in which an oxideisolated polysilicon back-gate electrode was formed beneath the channel and back-gate was used to control the threshold voltage of the device.…”

Section: Introductionmentioning

confidence: 99%

An Analytical Threshold Voltage Model of Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Back-Gate Control

Saramekala

Tiwari

2016

Journal of Elec Materi

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This paper presents an analytical threshold voltage model for back-gated fully depleted (FD), recessed-source drain silicon-on-insulator metal-oxide-semiconductor field-effect transistors (MOSFETs). Analytical surface potential models have been developed at front and back surfaces of the channel by solving the two-dimensional (2-D) Poisson's equation in the channel region with appropriate boundary conditions assuming a parabolic potential profile in the transverse direction of the channel. The strong inversion criterion is applied to the front surface potential as well as on the back one in order to find two separate threshold voltages for front and back channels of the device, respectively. The device threshold voltage has been assumed to be associated with the surface that offers a lower threshold voltage. The developed model was analyzed extensively for a variety of device geometry parameters like the oxide and silicon channel thicknesses, the thickness of the source/drain extension in the buried oxide, and the applied bias voltages with back-gate control. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLASä, a 2-D device simulator from SILVACO.

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Design of Bulk Fin-Type Field-Effect Transistor Considering Gate Work-Function

Cited by 10 publications

References 15 publications

Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology

Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology

Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs

An Analytical Threshold Voltage Model of Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Back-Gate Control

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