2013 IEEE International Conference of IEEE Region 10 (TENCON 2013) 2013
DOI: 10.1109/tencon.2013.6718958
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Design of DG-CNFET for reduction of short channel effect over DG MOSFET at 20nm

S. S. Chopade
1
,
S.S. Mane
2
,
Dinesh Padole
3
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Cited by 4 publications
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Metal Gate Work Function Engineering: Sub-Nano Regime Double Gate MOSFETs

Hasan
1
,
Ullah
2
,
Hossain
3
et al. 2019
2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)
5
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Metal Gate Work Function Engineering: Sub-Nano Regime Double Gate MOSFETs

Hasan
1
,
Ullah
2
,
Hossain
3
et al. 2019
2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)
5
0
2
0
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Design of Dual Gate Carbon Nanotube FET and Analysis the Short Channel Effects

P,
K,
N
et al. 2023
2023 First International Conference on Advances in Electrical, Electronics and Computational Intelligence (ICAEECI)
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Impact of scaling channel length on the performances of nanoscale FETs

Saha
1
,
Chakma
2
,
Hasan
3
2016
2016 9th International Conference on Electrical and Computer Engineering (ICECE)
7
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