Abstract-Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at nearinfrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1 -1 MeV electrons at the LBNL 60 Co source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a sixyear mission lifetime with no annealing, we expect an increase in dark current of 20 e − /pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3 × 10 −6 and 1 × 10 −6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.

No abstract

No abstract

No abstract

The scaling down of modern devices beyond 15 nm has faced major setbacks as it engendered short channel effects which were seemingly inexorable. One of the solutions proposed was to replace the conventional silicon channel with carbon nanotubes (CNTs), giving rise to the carbon nanotube field-effect transistor (CNTFET). CNTs provide unrivaled electrical and mechanical properties which make them an attractive alternative to silicon for channel materials. In this research work, a cylindrical gate CNTFET model is proposed, and its performance is studied and compared with existing experimental results. The performance of the device due to the variation in the doping profile of the source and drain is studied to realize a device that can manifest superior characteristics compared with existing devices. A model with a non-uniform doping profile is proposed that results in a significant reduction in leakage current. The characteristics upon which the performance is evaluated are the on/off current ratio (I ON/I OFF), subthreshold swing (SS), and threshold voltage. By adjusting various parameters, a device is constructed with I ON/I OFF of 4 × 106, SS of 63 mV dec−1 (approximately), and a threshold voltage of 0.45 V, which performs better than existing devices shown in the literature. All the simulations have been performed by employing the nonequilibrium Green’s function formalism with the self-consistent solution of the Schrödinger and Poisson equations.