Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhenchuan

doi:10.1186/s11671-017-1958-3

Cited by 68 publications

(47 citation statements)

References 21 publications

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“…As a result, SS avg of 42.8 mV/decade and I ON of 10 −6 A/μm can be achieved by L-TFET. To further improve the performance of TFETs, an improved TG-TFET with T-shaped overlap and dual source is reported [20,21]. As a result, the I ON of TG-TFET reaches 81 μA/ μm.…”

Section: Introductionmentioning

confidence: 99%

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

et al. 2020

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In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of 12 orders of magnitude and no obvious ambipolar effect can be obtained. High κ material stack gate dielectric is induced to improve the off-state leakage, interface characteristics and the reliability of DF-TFET. Moreover, by using the dopingless channel and fin structure, the difficulties of doping process and asymmetric gate overlap formation can be resolved. As a result, the structure of DF-TFET can possess good manufacture applicability and remarkably reduce footprint. The physical mechanism of device and the effect of parameters on performance are studied in this work. Finally, on-state current (ION) of 58.8 μA/μm, minimum subthreshold swing of 2.8 mV/dec (SSmin), average subthreshold swing (SSavg) of 18.2 mV/dec can be obtained. With improved capacitance characteristics, cutoff frequency of 5.04 GHz and gain bandwidth product of 1.29 GHz can be obtained. With improved performance and robustness, DF-TFET can be a very attractive candidate for ultra-low-power applications.

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Section: Introductionmentioning

confidence: 99%

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

et al. 2020

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“…However, small ON-state current and large Miller capacitance are still inherent disadvantages in TFETs. To improve the ON-state current, a lot of novel structures of TFETs are proposed, for example, the L-shaped channel TFET (LTFET) [5][6][7], U-shaped channel TFET (UTFET) [8,9], symmetric TFET (S-TFET) [10,11], U-shaped channel with dual sources TFET (DS-UTFET) [12], covered source-channel TFETs (CSC-TFETs) [13], hetero junction TFET with T-shaped gate (HTG-TFET) [14], 2D materials channel TFET and hetero-bilayer TFETs [15,16]. As a whole, TFETs reported in recent years adopt abrupt junction at tunneling interface, which leads to a complex fabrication processes and a high thermal budget.…”

Section: Introductionmentioning

confidence: 99%

Design and Investigation of a Dual Material Gate Arsenic Alloy Heterostructure Junctionless TFET with a Lightly Doped Source

et al. 2019

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This paper designs and investigates a novel structure of dual material gate-engineered heterostructure junctionless tunnel field-effect transistor (DMGE-HJLTFET) with a lightly doped source. Similar to the conventional HJLTFET, the proposed structure still adopts an InAs/GaAs0.1Sb0.9 heterojunction at source and channel interface and employs a polarization electric field at the arsenic heterojunction induced by the lattice mismatch in the InAs and GaAs0.1Sb0.9 zinc blende crystal to improve band to band tunneling (BTBT) current. However, the gate electrode is divided into three parts in DMGE-HJLTFET namely the auxiliary gate (M1), control gate (M2) and tunnel gate (M3) with workfunctions ΦM1, ΦM2 and ΦM3, where ΦM1 = ΦM3 < ΦM2, which not only improves ON-state current but also decreases the OFF-state current. In addition, a lightly doped source is used to further decrease the OFF-state current of this device. Simulation results indicate that DMGE-HJLTFET provides superior metrics in terms of logic and analog/radio frequency (RF) performance as compared with conventional HJLTFET, the maximum ON-state current and transconductance of the DMGE-HJLTFET increases up to 5.46 × 10−4 A/μm and 1.51 × 10−3 S/μm at 1.0 V drain-to-source voltage (Vds). Moreover, average subthreshold swing (SSave) of DMGE-HJLTFET is as low as 15.4 mV/Dec at low drain voltages. Also, DMGE-HJLTFET could achieve a maximum cut-off frequency (fT) of 423 GHz at 0.92 V gate-to-source voltage (Vgs) and a maximum gain bandwidth (GBW) of 82 GHz at Vgs = 0.88 V, respectively. Therefore, it has great potential in future ultra-low power integrated circuit applications.

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“…However, there are also inherent disadvantages in TFETs, the most serious problems are small ON-state current and large miller capacitance. To address these issues, a lot of novel structures of TFETs are proposed [8][9][10][11][12][13][14][15][16][17][18][19]. As a whole, most of TFETs reported in recent years adopt different doping concentration in channel and active regions to form heavily doped abrupt junction at tunneling interface, which leads to a complex fabrication processes and a high thermal budget, what's more, introduction of high-density layer at source/channel junction and Gaussian doping in drain region also find difficultly during fabrication process and it's easy to be influenced by random dopant fluctuations (RDFs) [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate

et al. 2019

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In this paper, a dual metallic material gate heterostructure junctionless tunnel field-effect transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe heterostructure at the source/channel interface to improve the band to band tunneling (BTBT) rate, and introduce a sandwich stack (GaAs/Si/GaAs) at the drain region to suppress the OFF-state current and ambiplolar current. Simultaneously, to further decrease ambipolar current, the gate electrode is divided into three parts namely auxiliary gate (M1), control gate (M2), and tunnel gate (M3) with workfunctions Φ M1 , Φ M2 and Φ M3 , respectively, where Φ M1 = Φ M3 < Φ M2 . Simulation results indicate that DMMG-HJLTFET provides superior performance in terms of logic and analog/RF as compared with other possible combinations, the ON-state current of the DMMG-HJLTFET increases up to 9.04 × 10 −6 A/µm, and the maximum g m (which determine the analog performance of devices) of DMMG-HJLTFET is 1.11 × 10 −5 S/µm at 1.0V drain-to-source voltage (Vds). Meanwhile, RF performance of devices depends on the cut-off frequency (f T ) and gain bandwidth (GBW), and DMMG-HJLTFET could achieve a maximum f T of 5.84 GHz, and a maximum GBW of 0.39 GHz, respectively.

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Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

Cited by 68 publications

References 21 publications

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

Design and Investigation of a Dual Material Gate Arsenic Alloy Heterostructure Junctionless TFET with a Lightly Doped Source

Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate

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