2010 4th International Power Engineering and Optimization Conference (PEOCO) 2010
DOI: 10.1109/peoco.2010.5559191
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Design of high-side MOSFET driver using discrete components for 24V operation

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Cited by 9 publications
(4 citation statements)
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“…Budihardjo accurately evaluated and verified SPICE models commonly used in power MOSFET circuit design [ 13 ]. In order to speed up the switching speed of power MOSFETs and reduce the switching loss, Hwu introduced an efficient low-side gate drive circuit design method [ 14 ], and Rosnazri used discrete components to design a high-side high-frequency gate drive circuit [ 15 ]. In order to improve the power transfer efficiency of power amplifier circuits, Hurley introduced in detail the design method of push-pull high frequency transformers in switch circuits [ 16 ].…”
Section: Introductionmentioning
confidence: 99%
“…Budihardjo accurately evaluated and verified SPICE models commonly used in power MOSFET circuit design [ 13 ]. In order to speed up the switching speed of power MOSFETs and reduce the switching loss, Hwu introduced an efficient low-side gate drive circuit design method [ 14 ], and Rosnazri used discrete components to design a high-side high-frequency gate drive circuit [ 15 ]. In order to improve the power transfer efficiency of power amplifier circuits, Hurley introduced in detail the design method of push-pull high frequency transformers in switch circuits [ 16 ].…”
Section: Introductionmentioning
confidence: 99%
“…The circuit controls the direction (forward or backward) in which the motor turns by changing the current flow direction to the motor. The circuit is made up of 2 metal oxide semiconductor field-effect transistors (MOSFETs) connected as a half-H bridge circuit [11] [12] [13].…”
Section: Direct Motor Controlmentioning
confidence: 99%
“…Transistor) switch is a voltage-controlled electronic device preferred for switching application due to its high switching frequency in addition to its lower losses during conduction and switching cases [1][2][3][4]. When the driving circuit of the electronic switches is not properly designed, the switch block status occurs.…”
Section: Introduction E Mosfet (Metal Oxide Semiconductor Field E Ectmentioning
confidence: 99%
“…e MOSFET will directly switch on for gate voltages greater than the source value by a speci ed drop according to the switch input impedance and capacitance in addition to its other characteristics [4][5][6]. In case of high side, where the load is below the switch, the gate-to-source voltage depends on the load voltage, which is variable.…”
Section: Introduction E Mosfet (Metal Oxide Semiconductor Field E Ectmentioning
confidence: 99%