Design of radiation hard CMOS APS image sensors in a 0.35-μm standard process

Eid, Sayed I.; Chan, Tony Y.; Fossum, Eric R.; Tsai, Richard H.; Spagnuolo, Robert; Deily, John J.

doi:10.1117/12.426987

Cited by 3 publications

(3 citation statements)

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“…The MI-3 Plus consortium has recently developed a wafer size CMOS APS, named DynAMITe (Dynamic range Adjustable for Medical Imaging Technology) (Esposito et al 2012). Constructed using the same stitching fabrication used for the prototype APS but across the whole wafer, the sensor is currently the largest CMOS APS with enclosed geometry layout transistor design (Sayed et al 2001) to meet radiation hardness requirements. The APS has a total imaging area of 12.8 cm × 12.8 cm with two sides buttable.…”

Section: Discussionmentioning

confidence: 99%

Towards real-time VMAT verification using a prototype, high-speed CMOS active pixel sensor

et al. 2013

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This work investigates the feasibility of using a prototype complementary metal oxide semiconductor active pixel sensor (CMOS APS) for real-time verification of volumetric modulated arc therapy (VMAT) treatment. The prototype CMOS APS used region of interest read out on the chip to allow fast imaging of up to 403.6 frames per second (f/s). The sensor was made larger (5.4 cm × 5.4 cm) using recent advances in photolithographic technique but retains fast imaging speed with the sensor's regional read out. There is a paradigm shift in radiotherapy treatment verification with the advent of advanced treatment techniques such as VMAT. This work has demonstrated that the APS can track multi leaf collimator (MLC) leaves moving at 18 mm s(-1) with an automatic edge tracking algorithm at accuracy better than 1.0 mm even at the fastest imaging speed. Evaluation of the measured fluence distribution for an example VMAT delivery sampled at 50.4 f/s was shown to agree well with the planned fluence distribution, with an average gamma pass rate of 96% at 3%/3 mm. The MLC leaves motion and linac pulse rate variation delivered throughout the VMAT treatment can also be measured. The results demonstrate the potential of CMOS APS technology as a real-time radiotherapy dosimeter for delivery of complex treatments such as VMAT.

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Section: Discussionmentioning

confidence: 99%

Towards real-time VMAT verification using a prototype, high-speed CMOS active pixel sensor

et al. 2013

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“…For instance, Thin Film on ASIC (TFA) technology [20][21][22][23][24] and Complementary Active Pixel Sensors (CAPS) [25][26][27][28][29][30][31]. Finally, some studies have been carried out to study the radiation effects and how radiation induced dark current in APS [32][33][34][35][36][37][38][39] and the effect of hot carriers [40]. In addition, it is well known that heavy metals such as Cu, Ni, Fe or Zn, which appear in some CMOS image sensor processes, can cause defects in silicon and influence gate oxide quality in VLSI circuits.…”

Section: After 1997mentioning

confidence: 99%

“…Moreover, CMOS imagers are known to be tolerant to radiation, although true radiation tolerance can only be obtained using specific methods. Thus, there is a huge interest in radiation-tolerant imaging systems [32][33][34][35][36][37][38][39]135,136] …”

Section: Space Applicationsmentioning

confidence: 99%

Review of CMOS image sensors

Bigas

Cabruja

Salví

2006

Microelectronics Journal

498

230

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The role of CMOS Image Sensors since their birth around the 1960s, has been changing a lot. Unlike the past, current CMOS Image Sensors are becoming competitive with regard to Charged Couple Device (CCD) technology. They offer many advantages with respect to CCD, such as lower power consumption, lower voltage operation, on-chip functionality and lower cost. Nevertheless, they are still too noisy and less sensitive than CCDs.Noise and sensitivity are the key-factors to compete with industrial and scientific CCDs. It must be pointed out also that there are several kinds of CMOS Image sensors, each of them to satisfy the huge demand in different areas, such as Digital photography, industrial vision, medical and space applications, electrostatic sensing, automotive, instrumentation and 3D vision systems.In the wake of that, a lot of research has been carried out, focusing on problems to be solved such as sensitivity, noise, power consumption, voltage operation, speed imaging and dynamic range. In this paper, CMOS Image Sensors are reviewed, providing information on the latest advances achieved, their applications, the new challenges and their limitations. In conclusion, the State-of-the-art of CMOS Image Sensors. q

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