“…Compared to the positive-intrinsic-negative (PIN) diode [5,6], micro-electro-mechanical systems (MEMS) [7,8], and gallium arsenide (GaAs) psuedomorphic high electron mobility transistor (pHEMT) [9,10], Silicon-oninsulator (SOI) CMOS process shares the important features of being fast, reliable, and highly integratable, and thus, becomes a preferred choice for switch applications [11,12,13,14]. The low break-down voltage and conductive substrate limit the standard bulk CMOS for RF switch applications [15,16,17].…”