Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer

Du, Jiangfeng; Liu, Dong; Bai, Zhiyuan; Chen, Nanting; Yu, Qin

doi:10.1007/s10825-016-0908-0

Cited by 4 publications

(1 citation statement)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, with the commercial availability of high-quality, free-standing GaN substrate, GaN-on-GaN devices have been used frequently, because of their higher breakdown voltage (BV), larger current capacity, and superior dynamic performance compared with their lateral counterparts [4][5][6][7][8][9]. Due to the electric field crowding around the periphery of the main junction which could cause premature breakdown, the BV of vertical power device is still difficult to reach that of the ideal parallel-plane device.…”

Section: Introductionmentioning

confidence: 99%

Optimization of high breakdown voltage vertical trapezoidal GaN p‐n diode with a high‐K/low‐K compound dielectric for power applications

Zhao

Tian

et al. 2021

Micro & Nano Letters

Self Cite

View full text Add to dashboard Cite

This paper proposes a vertical trapezoidal GaN p-n diode with a high-K/low-K compound dielectric (CD-TGD) to improve the breakdown voltage (BV). By introducing the compound dielectric structure, a new peak of electric field will be induced in the n-type GaN drift region of the trapezoidal diode, to make the electric field distribution in the drift-region more uniform. The key parameters of the CD-TGD, including the angle of the bevel structure, the doping concentration of drift region, and the size of high-K/low-K compound dielectric layers, have been comprehensively investigated by TCAD Silvaco simulation to reveal their impacts on the diode's properties. The breakdown voltage of the optimized structure is boosted from 2780 V for vertical GaN diodes (VGD) to 4360 V for CD-TGD, which is 56.8% higher than that of VGD. The on-state resistance of the optimized CD-TGD is 1.53 mΩ⋅cm 2 , yielding a high FOM of 12.4 GW/cm 2 . What is more, the average breakdown electric field is 2.73 MV/cm, which is much closer to the material limits of GaN. INTRODUCTIONAs silicon-based power device technology has approached its theoretical limit in terms of power density and power conversion efficiency, the development of alternative materials is now the focus of recent researches. Gallium nitride (GaN)-based power devices exhibit the superior performance required for next-generation high power and high frequency power electronics systems, because of their high breakdown strength, low onresistance and high switching speed [1][2][3].Recently, with the commercial availability of high-quality, free-standing GaN substrate, GaN-on-GaN devices have been used frequently, because of their higher breakdown voltage (BV), larger current capacity, and superior dynamic performance compared with their lateral counterparts [4][5][6][7][8][9]. Due to the electric field crowding around the periphery of the main junction which could cause premature breakdown, the BV of vertical power device is still difficult to reach that of the ideal parallel-plane device. Until now, Some junction termination techniques, such as floating limiting rings (FLRs) and field plate,This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

show abstract

Section: Introductionmentioning

confidence: 99%

Optimization of high breakdown voltage vertical trapezoidal GaN p‐n diode with a high‐K/low‐K compound dielectric for power applications

Zhao

Tian

et al. 2021

Micro & Nano Letters

Self Cite

View full text Add to dashboard Cite

show abstract

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Meneghini

Fabris

Ruzzarin

et al. 2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

This article reviews most recent results on the reliability of vertical GaN‐based devices, by presenting a few case studies focused on the stability and degradation of high‐voltage GaN‐on‐GaN diodes and of GaN‐based field‐effect transistors (FETs). With regard to diodes, two relevant stress conditions are investigated. The first is operation at high forward current that can induce a degradation of the electrical properties of the devices, mostly consisting in an increase in the operating voltage, well correlated to a decrease in the electroluminescence signal emitted by the diodes. This degradation process is ascribed to the diffusion of hydrogen from the highly p‐type doped regions toward the junction, with consequent compensation of the acceptor (Mg) dopant. The second stress regime investigated on diodes is avalanche: specifically, it is shown that polarization‐doped GaN devices may show avalanche capability, and the stability of diodes in avalanche regime is investigated in detail. With regard to transistors, the analysis is focused on GaN‐on‐GaN vertical Fin‐FETs. First, the stability of the threshold voltage under positive gate stress is analyzed, and the role of interface/oxide traps is discussed by experimental characterization. Then, the degradation under positive gate or high‐drain stress is investigated, to provide information on the dominant degradation processes.

show abstract

Design of high performance normally-off dual junction gate AlGaN/GaN heterostructure field effect transistors for high voltage application

Bai

Jiang

et al. 2017

J Comput Electron

View full text Add to dashboard Cite

Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer

Cited by 4 publications

References 22 publications

Optimization of high breakdown voltage vertical trapezoidal GaN p‐n diode with a high‐K/low‐K compound dielectric for power applications

Optimization of high breakdown voltage vertical trapezoidal GaN p‐n diode with a high‐K/low‐K compound dielectric for power applications

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Design of high performance normally-off dual junction gate AlGaN/GaN heterostructure field effect transistors for high voltage application

Contact Info

Product

Resources

About