Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing

Troia, Benedetto; Khokhar, Ali Z.; Nedeljkovic, Milos; Reynolds, Scott A.; Hu, Y.; Mashanovich, Goran Z.; Passaro, Vittorio M. N.

doi:10.3390/s150613548

Cited by 13 publications

(8 citation statements)

References 46 publications

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“…T He success of silicon photonic devices has gone beyond data interconnects and has undoubtedly progressed to a wide range of applications such as sensing, all optical processing and quantum photonics [1]- [3]. However, some of the intrinsic properties of silicon pose challenges to the successful demonstration of devices for these new applications.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nitride Photonics for the Near-Infrared

Bucio

Lacava

Clementi

et al. 2020

IEEE J. Select. Topics Quantum Electron.

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In recent years, silicon nitride has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (<350 • C) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 µm wavelength range.

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Section: Introductionmentioning

confidence: 99%

Silicon Nitride Photonics for the Near-Infrared

Bucio

Lacava

Clementi

et al. 2020

IEEE J. Select. Topics Quantum Electron.

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“…Sensitivities are enhanced by a factor, up to several hundred times that of a single MR, which can then reduce the sensor limit of detection or ease the detection of low concentration analytes using simplified experimental setups. State of the art Vernier effect devices and performances have been described in [11], [12]. Various Vernier effect configurations in silicon-on-insulator (SOI) or in silicon nitride (SiN) have been proposed experimentally as, for example, the commonly used cascaded MR [11], [13], [14], a MR cascaded with a MZ [15], two cascaded MZs [16] and very recently, three cascaded MRs [17].…”

Section: Introductionmentioning

confidence: 99%

High sensitivity optical biosensor based on polymer materials and using the Vernier effect

Azuelos¹,

Girault²,

Lorrain³

et al. 2017

Opt. Express

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We demonstrate the fabrication of a Vernier effect SU8/PMATRIFE polymer optical biosensor with high homogeneous sensitivity using a standard photolithography process. The sensor is based on one micro-resonator embedded on each arm of a Mach-Zehnder interferometer. Measurements are based on the refractive index variation of the optical waveguide superstrate with different concentrations of glucose solutions. The sensitivity of the sensor has been measured as 17558 nm/RIU and the limit of detection has been estimated to 1.1.10 RIU.

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“…Silicon photonics stands to be a highly desirable platform for the scalable implementation of photonic applications due it its fabrication compatibility with mature CMOS technologies [1 ], [ 2], and thus enabling low cost manufacturing of Photonic Integrated Circuits (PIC) at high volume. Interest in Mid-Infrared (MIR) Photonics has been gaining momentum in both academia and industry.…”

Section: Introductionmentioning

confidence: 99%

Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution

et al. 2019

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We designed and demonstrated TE-mode arbitrary power splitters based on adiabatic mode evolution. The power splitters are designed with a footprint of smaller than 12 × 2.9 µm 2 , fabricated on a 400-nm silicon-on-insulator platform, requiring only a single etch step. The optimization process and the conditions for arbitrary-power splitting are performed using three-dimensional-FDTD simulations. We prove this concept through the fabrication of asymmetrical adiabatic evolution-based power splitters with splitting ratios of 50:50, 60:40, and 70:30. The fabricated devices are shown to agree closely with simulation results. Broadband operation with low insertion loss of 0.11-0.6 dB is demonstrated across the 3.66-3.89 µm wavelength range (230 nm). This component has applications in a multitude of areas such as spectroscopic optical sensing and optical phased arrays photonic integrated circuits etc.

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Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing

Cited by 13 publications

References 46 publications

Silicon Nitride Photonics for the Near-Infrared

Silicon Nitride Photonics for the Near-Infrared

High sensitivity optical biosensor based on polymer materials and using the Vernier effect

Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution

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