Designing a Spin-Seebeck Diode

Borlenghi, Simone; Wang, Weiwei; Fangohr, Hans; Bergqvist, Lars; Delin, Anna

doi:10.1103/physrevlett.112.047203

Cited by 58 publications

(79 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar rectification of spin Seebeck effect is also discussed in other insulating magnetic systems 20,21 . Beyond spin Seebeck diodes, the negative differential spin Seebeck effect (NDSSE) has been further uncovered both in metal/insulating magnet interfaces 18 and magnon tunneling junctions 19 , i.e., increasing thermal bias gives the decreasing spin current.…”

Section: Introductionsupporting

confidence: 69%

“…This is because the DOS overlap ρ v↑ ( + Ω 0 )ρ v↓ ( ) of the down polarization case is larger than that of the up case. The increased DOS overlap increases the effective system-lead coupling (∝J In other words, we obtain the ASSE and a spin Seebeck diode, which acts as a good thermal spin conductor in one direction but acts as a poor spin Seebeck conductor or even an insulator in the opposite direction [18][19][20][21] . This is due to the fact that when two leads have different polarizations, the different spin-resolved DOS overlaps in the integral Fig.…”

Section: B Nonlinear Transport Propertiesmentioning

confidence: 93%

See 1 more Smart Citation

Nanoscale Spin Seebeck Rectifier: Controlling Thermal Spin Transport across Insulating Magnetic Junctions with Localized Spin

2014

View full text Add to dashboard Cite

The spin Seebeck effect is studied across a charge insulating magnetic junction, in which thermal-spin conjugate transport is assisted by the exchange interactions between the localized spin in the center and electrons in metallic leads. We show that, in contrast with bulk spin Seebeck effect, the figure of merit of such nanoscale thermal-spin conversion can be infinite, leading to the ideal Carnot efficiency in the linear response regime. We also find that in the nonlinear spin Seebeck transport regime, the device possesses the asymmetric and negative differential spin Seebeck effects. In the last, the situations with leaking electron tunneling are also discussed. This nanoscale thermal spin rectifier, by tuning the junction parameters, can act as a spin Seebeck diode, spin Seebeck transistor and spin Seebeck switch, which could have substantial implications for flexible thermal and information control in molecular spin caloritronics.

show abstract

Section: Introductionsupporting

confidence: 69%

Section: B Nonlinear Transport Propertiesmentioning

confidence: 93%

Nanoscale Spin Seebeck Rectifier: Controlling Thermal Spin Transport across Insulating Magnetic Junctions with Localized Spin

2014

View full text Add to dashboard Cite

show abstract

“…Due to the presence of the band gap for the right electrode in [AFM-AFM] and [FM-AFM], the transport channels open only when Δ T < 0 (see Fig. 4e,g), resulting in the SSD feature, and the physical mechanism may be based on the spin-wave excitations in the metal-insulator interface 32 . Inspecting the transmission spectrum of Fig.…”

Section: Resultsmentioning

confidence: 99%

Multiple thermal spin transport performances of graphene nanoribbon heterojuction co-doped with Nitrogen and Boron

Huang

Gao

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Graphene nanoribbon is a popular material in spintronics owing to its unique electronic properties. Here, we propose a novel spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of a pure single-hydrogen-terminated ZGNR and one doped with nitrogen and boron. Using the density functional theory combined with the non-equilibrium Green’s function, we investigate the thermal spin transport properties of the heterojunction under different magnetic configurations only by a temperature gradient without an external gate or bias voltage. Our results indicate that thermally-induced spin polarized currents can be tuned by switching the magnetic configurations, resulting in a perfect thermal colossal magnetoresistance effect. The heterojunctions with different magnetic configurations exhibit a variety of excellent transport characteristics, including the spin-Seebeck effect, the spin-filtering effect, the temperature switching effect, the negative differential thermal resistance effect and the spin-Seebeck diode feature, which makes the heterojunction a promising candidate for high-efficiently multifunctional spin caloritronic applications.

show abstract

“…In this work, we demonstrate the possibility of making new SSD for spin caloritronics devices based on 2D materials, in which, the microscopic mechanism is different from the previous one 8 . We adopt zigzag silicene nanoribbon (ZSiNR) heterojunction in our design to elucidate the concept.…”

Section: Introductionmentioning

confidence: 86%

“…A legendary discovery of spin caloritronics research is the observation of the spin-Seebeck effect (SSE) 7 , namely, a spin current and an associated spin voltage are induced by a temperature gradient. As further step towards device applications, a design of spin-Seebeck diode (SSD) was proposed in a spin-valve nanopillar geometry that allow the thermal-induced spin current to flow only in one direction 8 . Its physical mechanism mainly relies on the spin-wave excitations at metal-magnetic insulator interfaces, which is certainly not the only route to realize SSE 2 .…”

Section: Introductionmentioning

confidence: 99%

Design for a spin-Seebeck diode based on two-dimensional materials

et al. 2015

Phys. Rev. B

View full text Add to dashboard Cite

Studies of the Spin-Seebeck effect (SSE) are very important for the developments of fundamental science and novel low-power-consumption technologies. Spin-Seebeck diode (SSD), in which the spin current can be driven by a forward temperature gradient but not by a reverse temperature gradient, is a key unit in spin caloritronic devices. Here, we propose a new design of SSD using two-dimensional (2D) materials such as the silicene and phosphorene nanoribbons as the source and drain. Due to their unique band structures and magnetic states, thermally driven spin-up and spindown currents flow in opposite directions. This mechanism is different from that of the previous one that uses two Permalloy circular disks [Phys. Rev. Lett. 2014, 112, 047203], and the SSD in our design can be easily integrated with gate voltage control. Since the concept of this design is rather general and applicable to many 2D materials, it is promising for the realization and exploitation of SSD in nanodevices. PACS number(s): 73.23.Hk

show abstract

Designing a Spin-Seebeck Diode

Cited by 58 publications

References 20 publications

Nanoscale Spin Seebeck Rectifier: Controlling Thermal Spin Transport across Insulating Magnetic Junctions with Localized Spin

Nanoscale Spin Seebeck Rectifier: Controlling Thermal Spin Transport across Insulating Magnetic Junctions with Localized Spin

Multiple thermal spin transport performances of graphene nanoribbon heterojuction co-doped with Nitrogen and Boron

Design for a spin-Seebeck diode based on two-dimensional materials

Contact Info

Product

Resources

About