2014
DOI: 10.4028/www.scientific.net/msf.778-780.791
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Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD

Abstract: Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mask having a varying thickness. The breakdown voltage is recorded to be over 96% of the parallel-plane breakdown voltage, and the reverse bias characteristics are well accorded with the result of TCAD simulation.

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Cited by 3 publications
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“…SiC power devices for high-voltage classes have been developed [1][2], and more than 3.3 kV class SiC devices for inverter/converter systems and railways have been commercial reality. In these applications, SiC unipolar devices such as MOSFETs and SBDs are used, and they can reduce power loss in fast-switching condition as compared to Si devices.…”
Section: Introductionmentioning
confidence: 99%
“…SiC power devices for high-voltage classes have been developed [1][2], and more than 3.3 kV class SiC devices for inverter/converter systems and railways have been commercial reality. In these applications, SiC unipolar devices such as MOSFETs and SBDs are used, and they can reduce power loss in fast-switching condition as compared to Si devices.…”
Section: Introductionmentioning
confidence: 99%