Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mask having a varying thickness. The breakdown voltage is recorded to be over 96% of the parallel-plane breakdown voltage, and the reverse bias characteristics are well accorded with the result of TCAD simulation.

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In this study, to demonstrate the potential of the SiC-IGBT for high voltage application, we fabricated 13 kV class SiC-IGBT, and evaluated static characteristics and the ruggedness. The on-state forward voltage of 5.2 V at a collector current density of 100 A/cm2 was obtained, and the breakdown voltage of 13.7 kV was achieved. Successful evaluation of SCSOA was obtained under the collector voltage of 4.6 kV, and utilizing the optimized layout with low saturation current, we realized the increase of the short circuit time. RBSOA turn-off was successfully achieved without any breakdown by latch up mode under the collector voltage of 4.0 kV and current density of 900 A/cm2.

High breakdown voltage and smaller size of edge termination are required in SiC power devices. We simulated reverse bias characteristics of a variety of edge terminations targeting 6.5 kV MOSFET and the FLR showed the best trade-off between the size and the implanted Al dose. Fabricated pn diode TEGs with a FLR demonstrated over 6.5 kV breakdown voltage. We observed the avalanche breakdown visually by light emission and it corresponded to the simulated electric field. These indicate that we can fabricate the desirable FLR for 6.5 kV MOSFET.

SiC devices such as MOSFETs and SBDs reduce power loss in fast-switching condition as compared to Si devices. However, shallow and deep levels in SiC significantly affect dynamic characteristics of SiC devices. We already reported that high densities of deep levels were discovered in Al+-implanted samples other than the shallow Al acceptor level. In this work, we applied the deep level to the TCAD simulation, and examined the behavior of the carriers at high dV/dt conditions.