“…It can be shown that i 2 nd,th , the thermal noise at the drain terminal, is [2] i 2 nd,th = 4kT γg m (1) where k is the Boltzmann constant, T is the temperature in Kelvin, g m is the transconductance, and γ is the bias-dependent noise parameter. According to this model, γ approaches 1 when the drain-to-source voltage (V DS ) approaches zero and decreases to 2/3 when the device enters the saturation regime [2].…”