2001
DOI: 10.1016/s0026-2692(00)00105-1
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Designing CMOS folded-cascode operational amplifier with flicker noise minimisation

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Cited by 34 publications
(15 citation statements)
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“…It can be shown that i 2 nd,th , the thermal noise at the drain terminal, is [2] i 2 nd,th = 4kT γg m (1) where k is the Boltzmann constant, T is the temperature in Kelvin, g m is the transconductance, and γ is the bias-dependent noise parameter. According to this model, γ approaches 1 when the drain-to-source voltage (V DS ) approaches zero and decreases to 2/3 when the device enters the saturation regime [2].…”
Section: A Thermal Noisementioning
confidence: 99%
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“…It can be shown that i 2 nd,th , the thermal noise at the drain terminal, is [2] i 2 nd,th = 4kT γg m (1) where k is the Boltzmann constant, T is the temperature in Kelvin, g m is the transconductance, and γ is the bias-dependent noise parameter. According to this model, γ approaches 1 when the drain-to-source voltage (V DS ) approaches zero and decreases to 2/3 when the device enters the saturation regime [2].…”
Section: A Thermal Noisementioning
confidence: 99%
“…where K f is a process parameter that depends on the W and L of a transistor [1], C ox is the oxide capacitance, W is the width, and L is the length. At the device noise corner frequency (f co ), the thermal noise is equal to the flicker noise…”
Section: B Flicker Noisementioning
confidence: 99%
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“…Having g m4 smaller than g m2 to reduce noise also helps reduce the second term in (14). The overdrive voltage V ov1,2 which is designed to be a small value helps minimize the last term [8] in (14). Having a large size for the input pair reduces the standard deviation of the difference between the input pair's thresholds [10].…”
Section: Offset Reductionmentioning
confidence: 99%