Designing Parameters for RF CMOS Cells

Srivastava, Viranjay M.; Yadav, K. S.; Singh, Ghanshyam

doi:10.4236/cs.2010.12008

Cited by 9 publications

(3 citation statements)

References 12 publications

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“…Since the interface contact resistance is inversely proportional to the total gate area as in term of length and width of a gate. The reduction of resistance should lead to improved RF properties in MOSFETs [5,[23][24][25][26][27][28]. In Figure 10 these diodes are represented by their junction capacitances, C sb and C db .…”

Section: Effective Resistance Of Dp4t Rf Cmos Due To Double-gatementioning

confidence: 99%

Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

Srivastava¹

2010

WET

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In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless telecommunication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semiconductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.

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Section: Effective Resistance Of Dp4t Rf Cmos Due To Double-gatementioning

confidence: 99%

Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

Srivastava¹

2010

WET

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“…The results indicate that 2.0 µm CMOS can be used successfully up to approximately 0.25 GHz with 0.8 µm cells useful up to approximately 1 GHz. Srivastava et al [10] investigated the design parameters of RF CMOS cells which is suitable for switch in the wireless telecommunication systems and this results for the development of a cell library which includes the basics of the circuit elements required for the radio frequency sub-systems of the integrated circuits such as V-I characteristics at low voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices.…”

Section: Introductionmentioning

confidence: 99%

Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

Srivastava¹,

Yadav²,

Singh³

2011

WET

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In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF

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“…After that addition, this small division to the minimum voltage as in Figure 9, one by one, until we reach to maximum voltage, this is done in programming using loop bearing name "for count and division" as shown in Figure 9 and a switch is added (bearing block named "click for each reading"), by which two readings can be taken, one before heating and other after heating, so that better performance can be observed. To set the frequency at which reading of capacitances are required (low frequency or quasistatic and high frequency or radio frequency) [2,[26][27][28][29] here is a block with name "frequency" is added.…”

Section: Process For Measurements Of Device Parametersmentioning

confidence: 99%

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Srivastava¹,

Yadav²,

Singh³

2011

IJCNS

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To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to -5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

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Designing Parameters for RF CMOS Cells

Cited by 9 publications

References 12 publications

Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

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