Photodetectors capable of detecting light in a wide spectrum is central to diversified optoelectronic applications in spectroscopy, remote sensing, imaging and optical communication. [1] Two-dimensional (2D) transition metal dichalcogenides (TMDs) provide a tremendous potential for broadband optoelectronics due to their relatively high mobility, appropriate bandgaps, and flexibility. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] In particular, TMD layers of different bandgaps and doping (p or n types) can be stacked together into van der 2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice-mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can surpass the fundamental limitations on their conventional semiconductor counterparts. Herein, a novel 2D h-BN/p-MoTe 2 / graphene/n-SnS 2 /h-BN p-g-n junction, fabricated by a layer-by-layer dry transfer, demonstrates high-sensitivity, broadband photodetection at room temperature. The combination of the MoTe 2 and SnS 2 of complementary bandgaps, and the graphene interlayer provides a unique vdW heterostructure with a vertical built-in electric field for high-efficiency broadband light absorption, exciton dissociation, and carrier transfer. The graphene interlayer plays a critical role in enhancing sensitivity and broadening the spectral range. An optimized device containing 5−7-layer graphene has been achieved and shows an extraordinary responsivity exceeding 2600 A W −1 with fast photoresponse and specific detectivity up to ≈10 13 Jones in the ultraviolet-visible-near-infrared spectrum. This result suggests that the vdW p-g-n junctions containing multiple photoactive TMDs can provide a viable approach toward future ultrahigh-sensitivity and broadband photonic detectors.