Desorption of Indium during the Growth of GaAs/InGaAs/GaAs Heterostructures by Molecular Beam Epitaxy

Abstract

The desorption of indium during molecular beam epitaxy (MBE) growth of InGaAs and GaAs/InGaAs/GaAs quantum wells has been investigated by reflection high energy electron diffraction (RHEED). The indium desorption activation energy calculated from the temperature dependence of the InAs growth rate is shown to be almost same as the enthalpy of InAs decomposition. It was found that the RHEED pattern transition time, t1, from (4×2) of InGaAs to (2×4) of GaAs after GaAs heteroepitaxial growth on InGaAs began, was the desorption time of indium, which segregated to the growth front from the topmost layer of InGaAs. The activation energy determined from this process is close to the desorption enthalpy of indium from indium liquid.

Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

“…The newly deposited InAs can be incorporated into the WL and QDs or re-evaporated through the indium desorption process. Other processes, such as the formation of quasi-QDs or indium droplets, are neglected for their relatively lower rates [22,23]. In our previous works, the CTs of those samples were successfully determined, which enabled us to consider the 2D and 3D growth stages separately in this rate equation model [16].…”

“…The indium desorption rate is presumed to be proportional to the InAs amount in WL, and τ des represents the desorption time constant. The indium desorption process is generally considered as thermally activated [23,24]; τ des can be written as ${\tau }_{\text{italicdes}}=\frac{1}{{\nu }_0}\text{exp}\left(\frac{E_{\text{italicdes}}}{kT}\right)$, where v 0 is a pre-exponential factor and E des is the activation energy of the indium desorption process. By solving Equation 1, the WL thickness versus growth time can be written as follows:…”

On the determination of the structural parameters of GaxIn1−xAs/AlAsySb1−y superlattices by X-ray diffraction

“…4 that this ratio is dependent on the growth temperature, while the same type of data analysis for the AlAs and AlSb equivalent growth rates does not show a significant variation. However, it is well established that in the temperature range investigated here, the incorporation coefficient of the group III element is equal to one in standard MBE growth conditions [22][23][24]. Therefore, R should not vary between 450 and 480 1C.…”

Thermodynamic processes on a semiconductor surface during in‐situ multi‐beam laser interference patterning

“…4 that the indium desorption rate is proportional to the surface temperature. The indium desorption is a thermally activated process and the desorption rate follows the Arrhenius law can be expressed as [30][31][32] = (8) where A is the pre-exponential factor, is the activation energy of the indium desorption process, k is Boltzmann's constant, T is the substrate temperature in Kelvin. The values of = 10 and = 3.5 are used in the calculation [31][32][33].…”