2007
DOI: 10.1063/1.2431091
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Desorption of InSb(001) native oxide and surface smoothing induced by low temperature annealing under molecular hydrogen flow

Abstract: The preparation of InSb (001) oxygen-free surfaces by thermal annealing at relatively low temperatures under molecular hydrogen flow is reported. This process is compared with thermal oxide desorption (TOD) at 400°C under ultrahigh vacuum conditions. Molecular hydrogen cleaning (MHC) at substrate temperature of 250°C and at hydrogen pressure of 5×10−6Torr resulted in complete desorption of the native oxide layer. Furthermore, no carbon contamination was observed on the surface following this treatment. The sur… Show more

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Cited by 7 publications
(2 citation statements)
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“…At 250°C and dynamic hydrogen pressure of 5 ϫ 10 −6 Torr the native oxides were removed completely from the surface within 30-60 min, depending on the oxide layer thickness. 5,6 Annealing the MH cleaned samples at 400°C for 2 h, under UHV conditions after the MHC process, did not result in any significant change in the XPS or AES spectra. At dynamic H 2 pressures higher than 3 ϫ 10 −6 Torr or at temperatures higher than 250°C the oxides were removed faster; however, the In/ Sb peak ratio increased and the substrate surface started to roughen showing small round bumps, most probably In droplets.…”
Section: A Insb"100…mentioning
confidence: 96%
“…At 250°C and dynamic hydrogen pressure of 5 ϫ 10 −6 Torr the native oxides were removed completely from the surface within 30-60 min, depending on the oxide layer thickness. 5,6 Annealing the MH cleaned samples at 400°C for 2 h, under UHV conditions after the MHC process, did not result in any significant change in the XPS or AES spectra. At dynamic H 2 pressures higher than 3 ϫ 10 −6 Torr or at temperatures higher than 250°C the oxides were removed faster; however, the In/ Sb peak ratio increased and the substrate surface started to roughen showing small round bumps, most probably In droplets.…”
Section: A Insb"100…mentioning
confidence: 96%
“…This lowtemperature process has distinct advantages compared to hightemperature thermal oxide desorption, which may yield metallic indium droplets due to high volatility of arsenic. 17 Atomic hydrogen treatments have been successfully reported for oxide reduction and contaminant removal on GaAs, 21 InP, 22 InSb, 23 and nonpolar InAs͑110͒. 24 Temperatures of 250-400°C, which are crucial to highquality interfaces and surfaces, were used in those previous studies.…”
mentioning
confidence: 99%