Detailed Characterization of Transceiver Parameters Through Loop-Back-Based BiST

Erdogan, E.S.; Ozev, Sule

doi:10.1109/tvlsi.2009.2017542

Cited by 43 publications

(14 citation statements)

References 18 publications

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“…However, these technologies are prone to higher process variations and defect rates, which makes RF BIST both more necessary and more challenging. Several techniques in the literature aim to reduce the dependence on external RF instrumentation for low cost testing [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. In [2][3][4], simple test signals such as multi-tone sinusoidal signals, are used to generate output data, where the performance of RF transceiver is predicted using the output data as well as machine learning methods.…”

Section: Introductionmentioning

confidence: 99%

“…In [5][6][7][8][9][10], the loopback configuration is used to characterize both the transmitter and the receiver. In [5,6], the authors derive the analytical model for the entire loop-back path and use numerical techniques in order to solve transmitter and receiver parameters simultaneously. In [7], authors use similar mathematical models with specialized signals in order to achieve an analytical solution.…”

Section: Introductionmentioning

confidence: 99%

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Process independent gain measurement with low overhead via BIST/DUT co-design

Jeong

Kitchen

Ozev

2016

2016 IEEE 34th VLSI Test Symposium (VTS)

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Built-in Self-Test (BIST) is essential, particularly for radio frequency (RF) devices where off-chip RF signal analysis is costly or in some cases, infeasible. Two major problems have made RF BIST elusive. First, process variations make the BIST circuit behavior hard to predict, limiting accuracy of measurements. Second, the overhead, particularly in terms of performance degradation, make RF BIST undesirable. In this paper, we address these two issues for RF BIST gain measurement. First, we show that by setting up relative gain measurements and carefully crafting the BIST methodology and the matching BIST circuit, the effect of process variations on measurement accuracy can be suppressed. Second, by codesigning the BIST circuit together with the device under test (DUT), performance impact can be eliminated or significantly reduced. To demonstrate the proposed approach, we design a low noise amplifier (LNA) as the DUT together with the BIST circuit. We also design a stand-alone LNA with the same specifications and manufacture these two circuits on the same die. We show that the LNA gain can be determined very accurately, using only DC measurements, and the performance impact of the BIST circuit is negligible.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Process independent gain measurement with low overhead via BIST/DUT co-design

Jeong

Kitchen

Ozev

2016

2016 IEEE 34th VLSI Test Symposium (VTS)

Self Cite

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“…Especially for RF circuits this objective is hard to satisfy since these circuits are very sensitive and tapping into their signal paths may seriously unbalance the performance trade-offs achieved by design. For example, loop-back test for transceivers [6], [7], [8], [9], where the test signals are generated in the baseband and the transmitter's output is connected to the receiver's input This paper is an invited summary paper on the Ph.D. dissertation work of Louay Abdallah [I] that was earried out at TIMA Laboratory (CNRSGrenoble INP -UJF), Grenoble, Franee, from Oetober 2008 to Oetober 2012 under the supervision of Haralampos-G. Stratigopoulos and Salvador Mir: Parts of this summary paper have been previously published in [2] , [3], [4] , [5]. This summary paper was invited in the framework of the finals of the 2013 IEEE Computer Soeiety Test Teehnology Teehnieal Couneil (TTTC) doetoral thesis award competition that took plaee at the 20 to analyze the test response also in the baseband, requires the insertion of a switch and an attenuator to perform the connection and, for some types of transceivers, even an extra mixer is inserted in the RF signal path.…”

Section: Introductionmentioning

confidence: 99%

True non-intrusive sensors for RF built-in test

Abdallah¹,

Stratigopoulos²,

Mir³

2013

2013 IEEE International Test Conference (ITC)

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In this summary paper, we discuss two types of sensors that provide a buHt-in test solution for RF circuits. The key characteristic of the sensors is that they are non-intrusive, in the sense that they are not electrically connected to the RF circuit under test. This has the important advantage that the design of the RF circuit becomes totally independent from the design of the sensors. In other words, the RF circuit design methodology and performance trade-offs are totally transparent to the insertion of the buHt-in test strategy. In particular, we pro pose variation aware sensors to implement an implicit functional test and a temperature sensor to implement a defect-oriented test. The proposed sensors provide DC or low-frequency measurements, thus they have the potential to reduce drastically the test cost.We discuss the principle of operation of the sensors, we provide design guidelines, and we demonstrate the concept on a set of fabricated chips. To the best of our knowledge, tbis is the first proof-of-concept of RF test based on non-intrusive sensors.

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“…Recently, in [12], Erdogan and Ozev describe a method for characterizing the RF transceiver parameters from analysis of loopback data obtained for a specified number of "random" OFDM frames. In addition to the fundamental nonlinearity parameters diagnosed in [3,11], they are also [13,14] it is shown how a few multitones can be used to determine RF system level as well as embedded module performance metrics using nonlinear solvers as discussed in [7][8][9][10]12]. A key benefit of this test/diagnosis methodology is that it does not require the use of supervised learners as used in [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…A key benefit of this test/diagnosis methodology is that it does not require the use of supervised learners as used in [1][2][3]. In the current work, optimized multitones are used for test stimulus as opposed to the random OFDM frames used in [12]. A key requirement for tuning is that the test response must be maximally sensitive to process as well as tuning knob perturbations across the allowed ranges of tuning knob values and across multiple process corners.…”

Section: Introductionmentioning

confidence: 99%

Accurate signature driven power conscious tuning of RF systems using hierarchical performance models

Banerjee

Sen

Devarakond

et al. 2011

2011 IEEE International Test Conference

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In this research, a new post-manufacture tuning approach for yield improvement of advanced RF systems is developed. The proposed method first determines module level performances from the system level response (signature) to an applied RF diagnostic test using top-down model diagnosis. Then a constrained optimizer is used to determine the best module level tuning parameter values that satisfy system level specifications (bottom-up analysis) based on the determined performances of the individual modules in a power-conscious manner. Both top-down and bottom-up analysis techniques are supported by hierarchical RF behavioral models. The health (effects of process variations) of individual modules affects the relationship between module level tuning parameters and module level performance metrics and is factored into the tuning procedure. A key benefit of the proposed approach is that only a single test application is needed. Simulation results and hardware data prove the efficiency of the proposed tuning technique.

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Detailed Characterization of Transceiver Parameters Through Loop-Back-Based BiST

Cited by 43 publications

References 18 publications

Process independent gain measurement with low overhead via BIST/DUT co-design

Process independent gain measurement with low overhead via BIST/DUT co-design

True non-intrusive sensors for RF built-in test

Accurate signature driven power conscious tuning of RF systems using hierarchical performance models

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