Detection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin films

Redinger, Alex; Hönes, Katja; Fontané, Xavier; Izquierdo-Roca, Víctor; Saucedo, Edgardo; Valle, Nathalie; Pérez-Rodrı́guez, A.; Siebentritt, Susanne

doi:10.1063/1.3558706

Cited by 201 publications

(140 citation statements)

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“…Despite these suitable optical properties and rising interest, there are difficulties in applying this material commercially as an absorber in solar cells. One of the major obstacles is the formation of secondary phases during the growth process, which can be detrimental to the solar cell performance [6,[10][11][12]. Therefore, it is important to investigate CZTSSe absorbers with a quick and non-destructive method to identify structural properties and the existence of secondary phases.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Demircioğlu¹,

Salas²,

Rey³

et al. 2017

Opt. Express

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Abstract:We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu 2 ZnSnSe 4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the optical parameters, such as refractive index and extinction coefficient in order to extrapolate the band gap values of CZTSe samples, and to obtain information about the presence of secondary phases at the front and back sides of the samples. We show that SE can be used as a non-destructive method for detection of the secondary phases ZnSe and MoSe 2 and to extrapolate the band gap values of CZTSe phase.

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Section: Introductionmentioning

confidence: 99%

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Demircioğlu¹,

Salas²,

Rey³

et al. 2017

Opt. Express

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“…This likely leads to the appearance of a ZnSe-like contribution that is expected at 250 cm À1 . 22 An additional contribution to the intensity increase of this region can also be related to the increase in density of Zn Sn antisites, which leads to transformation of the -Sn-Se-Cu-Se-Snvibrational chains into -Zn Sn -Se-Cu-Se-Zn Sn -, for which vibrations are also expected in the 250 cm À1 region, 21 experimentally identified as a B mode. According to the theoretical analysis, 21 -Sn-Se-Cu-Se-Sn-vibrations are expected at a frequency of 211 cm À1 .…”

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confidence: 99%

Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells

Dimitrievska

Fairbrother

Saucedo

et al. 2015

Applied Physics Letters

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This work presents a detailed analysis of the impact of compositionally induced defects on the vibrational properties of Cu2ZnSnSe4 absorbers for kesterite based solar cells. Systematic changes in the intensity of the E and B modes located around the 170, 220, and 250 cm-1 frequency regions, which involve mostly cation vibrations, were observed and analyzed in relation to the occurrence of different kinds of defect clusters involving VCu, ZnCu, ZnSn, CuZn, and SnZn point defects. Additional changes are also interpreted in terms of the appearance of SnSe, ZnSe, and CuSe-like contributions at the 185 and 250 cm-1 spectral regions, respectively. The sensitivity of the Raman measurements to the presence of these kinds of defects corroborates the potential of Raman scattering for point defect assessment in these systems. © 2015 AIP Publishing LLCPeer ReviewedPostprint (published version

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“…[1][2][3][4][5][6] Due to the increased number of elements in the materials, their synthesis is relatively more difficult than for binary and ternary semiconductors 7,8 because more secondary phases like ZnS, Cu 2 SnS 3 (CTS), ZnSe and Cu 2 SnSe 3 (CTSe) may coexist in the samples. 9,10 The coexistence of these secondary phase compounds will inevitably influence the electrical and optical properties of CZTS and CZTSe samples, which have been observed experimentally and taken as the reason for the scattering of the measured properties. 11 Despite a long history of the experimental study of CTS and CTSe ternary compounds, their fundamental properties such as the crystal structure and band gap are still under debate.…”

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Structural diversity and electronic properties of Cu2SnX3(X=S, Se): A fir

et al. 2011

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The ternary semiconductors Cu2SnX3 (X=S, Se) are found frequently as secondary phases in synthesized Cu2ZnSnS4 and Cu2ZnSnSe4 samples, but previous reports on their crystal structures and electronic band gaps are conflicting. Here we report their structural and electronic properties as calculated using a first-principles approach. We find that: (i) the diverse range of crystal structures such as the monoclinic, cubic and tetragonal phases can all be derived from the zinc-blende structure with tetrahedral coordination. (ii) The energy stability of different structures is determined primarily by the local cation coordination around anions, which can be explained by a generalized valence octet rule. Structures with only Cu3Sn and Cu2Sn2 clusters around the anions have low and nearly degenerate energies, which makes Cu and Sn partially disordered in the cation sublattice. (iii) The direct band gaps of the low energy compounds Cu2SnS3 and Cu2SnSe3 should be in the range of 0.8-0.9 eV and 0.4 eV respectively, and are weakly dependent on the long-range structural order. A direct analogy is drawn with the ordered vacancy compounds found in the Cu(In, Ga)Se2 (CIGS) solar cell absorbers.

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Detection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin films

Cited by 201 publications

References 18 publications

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells

Structural diversity and electronic properties of Cu2SnX3(X=S, Se): A fir

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