Detection of Acetonitrile and Chloroform Using Structures on the Base of Porous Silicon

Manakov, S. M.; Ibraimov, M.K.; Sagidolda, Ye.; Zhumatova, Sh. A.; Darmenkulova, M. B.

doi:10.18321/ectj796

Cited by 5 publications

(5 citation statements)

References 11 publications

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“…applied 10, 20, and 30 min. as etching times in order to crystalline silicon n-type (111) and (100) wafers in order to electrochemically etch PS [35][36][37][38]. It was confirmed that, while utilizing the electrochemical etching technique, the PS's depth, width, and roughness increased as the etching time rose [39][40][41][42][43][44].…”

Section: Introductionmentioning

confidence: 83%

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

Urabe

Nayef

Kamel

2023

Al-Mustansiriyah Journal of Science

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In this investigation, n-type (100) silicon wafers with a thickness of 600 ± 25 μm and resistance of 0.1-100 μΩ were used to manufacture porous silicon. With the aid of hydrofluoric acid (HF) with a 20% concentration, a current density of 20 mA/cm2, and various experimental drilling times of 5, 15, and 25 minutes with the fixation of other parameters, the photoelectrochemical etching method was successful. The morphology of porous silicon was investigated using scanning electron microscopy (SEM), the XRD- diffraction wide of porous silicon creation with rising apex peaks was confirmed, and (AFM) sponge-like morphology was seen, and the pore diameter grew larger as drilling time rose. In a drilling time of 15 minutes, it is able to quantify both the vibrational and electrical characteristics of the energy band gap using Raman analysis and PL detection. Investigate sample samples' current voltage readings (J-V) at various etching times. Additionally, we discovered devices with a broad wavelength that react to the response in the investigation of the spectrum response PS AL/PS/SI/Al as a photodetector.

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Section: Introductionmentioning

confidence: 83%

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

Urabe

Nayef

Kamel

2023

Al-Mustansiriyah Journal of Science

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“…S.M. Manakov et al developed a structure based on por-Si for detecting of acetonitrile and chloroform (Manakov et al, 2019). In fact, por-Si can be obtained by electrochemical etching in an electrolyte with hydrofluoric (HF) acid by applying an electric current to the silicon wafer (Zhang & Braun, 2012).…”

Section: Public Interest Statementmentioning

confidence: 99%

High sensitive NH₃ sensor based on electrochemically etched porous silicon

et al. 2020

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In the current study, porous silicon (por-Si) samples were fabricated by electrochemical etching at different times (20 min, 40 min, 60 min). Scanning electron microscope (SEM) images of horizontal cross-sections of the samples showed the formation of pores. The etched samples' porosity was determined by the gravimetric method and amounted to 59.5%, 72.7%, 83.3%, respectively. Optical characteristics such as Raman spectra and photoluminescence (PL) spectra were obtained. The current-voltage and capacitance-voltage characteristics were also measured to calculate the sensitivity of the samples. The study results show that sample, which is etched for 40 minutes has a maximum response value to ammonia (NH 3 ) gas than others, and the sensitivity is 33.25. The results demonstrated that it is possible to develop a high sensitive sensor device based on por-Si for determining NH 3 gas in concentrations below 0.1 ppm at room temperature.

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“…Unlike metal oxides, gas sensors based on PS do have good compatibility with current electronic technologies [15]. Manakov et al [16] used PS material as a sensitive material for a capacitive gas sensor to detect some organic compounds such as acetonitrile and chloroform. However, the PS material is usually unstable; that is, the material's surface is degraded over time under the influence of various factors [17].…”

Section: Introductionmentioning

confidence: 99%

The Improved Non-Polar Gas Sensing Performance of Surface-Modified Porous Silicon-Based Gas Sensors

et al. 2023

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The present article studied gas sensor sensing characteristics based on surface-modified porous silicon (PS) by depositing the metal oxide semiconductor layer. The PS layer was prepared through the electrochemical etching of crystalline silicon in an HF-based solution. DC magnetron sputtering technology was used to obtain the p-CuO layer on the surface of the p-PS. The obtained material’s structural, morphological, and sensing behavior were investigated using SEM, XRD, Raman spectra, and the current–voltage characteristics. For the detection of toluene and chloroform vapors, a planar structure was used. The sensing response value revealed that the CuO/PS-based gas sensors have good sensitivity for toluene and chloroform vapors. The sensing mechanism is explained using schematic energy band diagrams. Therefore, this approach is helpful for the development of a simple, cost-effective sensor for detecting non-polar chemical analytes.

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Detection of Acetonitrile and Chloroform Using Structures on the Base of Porous Silicon

Cited by 5 publications

References 11 publications

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

High sensitive NH₃ sensor based on electrochemically etched porous silicon

The Improved Non-Polar Gas Sensing Performance of Surface-Modified Porous Silicon-Based Gas Sensors

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Detection of Acetonitrile and Chloroform Using Structures on the Base of Porous Silicon

Cited by 5 publications

References 11 publications

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

High sensitive NH3 sensor based on electrochemically etched porous silicon

The Improved Non-Polar Gas Sensing Performance of Surface-Modified Porous Silicon-Based Gas Sensors

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High sensitive NH₃ sensor based on electrochemically etched porous silicon