Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and Pt

Abstract

Spin pumping transfers the spin momentum of the magnetization precession to the conduction electrons and forms pure spin currents, and was investigated in the ferromagnetic epitaxial Fe3Si films and polycrystalline Py films covered with normal metal (Pt, Au) overlayers, respectively. With the applied microwave applied from a cavity and an in-plane magnetic field, an electric voltage due to inverse spin-Hall effect is detected under the ferromagnetic resonance condition. A linear relationship between the measured voltage and microwave power has been obtained, consistent with a theoretical model. The spin Hall angles of Pt and Au as deduced from the present Py and Fe3Si data are in agreement with the published values. A very large voltage signal is observed for Fe3Si/Au film with in-situ capping of Au, suggesting the possibility of the future applications for the spintronic devices.

Efficient spin transport through native oxides of nickel and permalloy with platinum and gold overlayers

“…Note also that the spin pumping response is large, despite the use of Au as the NM layer. This indicates qualitatively that our Au films show larger values of α SH than many reports, 10,[41][42][43][44][45][46] as will be shown quantitatively below (Sec. V A).…”

Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures

“…[19][20][21] Compared to Py, Fe 3 Si, a ferromagnetic material with a Curie temperature of 840 K and a DO 3 crystal structure, has a smaller Gilbert damping constant (0.0082) than Py (0.012). 21 Since the spin-current density generated by spin pumping depends on the inverse of the effective damping constant, 22 utilization of Fe 3 Si may lead to significantly larger spin current density.…”

“…[19][20][21] Compared to Py, Fe 3 Si, a ferromagnetic material with a Curie temperature of 840 K and a DO 3 crystal structure, has a smaller Gilbert damping constant (0.0082) than Py (0.012). 21 Since the spin-current density generated by spin pumping depends on the inverse of the effective damping constant, 22 utilization of Fe 3 Si may lead to significantly larger spin current density. 21,23 In addition, the high degree of crystallinity of Fe 3 Si epitaxial films and the atomically abrupt interface between Fe 3 Si and GaAs long established in our previous studies has enabled present investigations of these epitaxial Fe 3 Si film as an excellent ferromagnet candidate for effective spin injection into GaAs.…”

“…21 Since the spin-current density generated by spin pumping depends on the inverse of the effective damping constant, 22 utilization of Fe 3 Si may lead to significantly larger spin current density. 21,23 In addition, the high degree of crystallinity of Fe 3 Si epitaxial films and the atomically abrupt interface between Fe 3 Si and GaAs long established in our previous studies has enabled present investigations of these epitaxial Fe 3 Si film as an excellent ferromagnet candidate for effective spin injection into GaAs. [19][20][21]24 In this work, we exploited the capabilities of molecule beam epitaxy (MBE) in two folds essential to the spin pumping study; first, to produce excellent crystallinity of GaAs epi-layer and Fe 3 Si layer with a sharp interface; second, to tailor the thickness and doping (n, p) profiles of the conducting GaAs epi-layer in order to eliminate effectively the thermal heating problem encountered often in FM/semiconductor heterostructures under microwaves.…”

Effect of the Local Environment on the Magnetic Properties of Mn3Si: Hybrid Ab Initio and Model Study

“…Transition metal silicides provided to be the promising materials for spintronics, microelectronics, and optoelectronic applications. These materials can be grown epitaxially on many different semiconductor and insulator substrates, and its degrees of chemical and structural order can be changed by the thin film growth techniques. Their magnetic and electronic properties depend on the crystal structure and composition and vary from ferromagnetic metal (Fe 3 Si) to paramagnetic semiconductor (β‐FeSi 2 ).…”