Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe

Tani, Masahiko; Lee, Kwang-Su; Zhang, X.-C.

doi:10.1063/1.1289914

Cited by 130 publications

(74 citation statements)

References 9 publications

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“…The detectors as photoconductive antennas (PCAs) (see Fig. 9) on the base of highly resistive semiconductors (e.g., low temperature grown GaAs [66,67] or narrow−gap InGaAs [68]) are frequently used in TDS technique. During the laser pulse, the excited carriers are accelerated by the electrical field component of the incident THz pulse with the time−dependent electrical field E(t).…”

Section: Photoconductive Broadband Thz Antenna Sensorsmentioning

confidence: 99%

THz radiation sensors

Сизов

2010

Opto-Electronics Review

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In the paper, issues associated with the development and exploitation of terahertz (THz) radiation detectors are discussed. The paper is written for those readers who desire an analysis of the latest developments in different type of THz radiation sensors (detectors), which play an increasing role in different areas of human activity (e.g., security, biological, drugs and explosions detection, imaging, astronomy applications, etc.). The basic physical phenomena and the recent progress in both direct and heterodyne detectors are discussed. More details concern Schottky barrier diodes, pair braking detectors, hot electron mixers, and field-effect transistor detectors. Also the operational conditions of THz detectors and their upper performance limits are discussed.

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Section: Photoconductive Broadband Thz Antenna Sensorsmentioning

confidence: 99%

THz radiation sensors

Сизов

2010

Opto-Electronics Review

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“…7 are plotted the mean optical power dependency of the dc photocurrent measured at V b = 1 V. A superlinear dependency (I ph ∝ P 1.5 opt ) coming from two photon absorption and absorption via midgap level is present in femtosecond regime as it has been already observed. 13,15 Photocurrents of 9.3 µA (DGC) and 3.3 µA (FPC) were measured at V b = 1 V and P opt = 2.2 mW. It can be deduced, by comparison with the results obtained under CW illumination, that around 15% of the incident light is absorbed in the cavity of the DGC.…”

Section: -3mentioning

confidence: 99%

“…[12][13][14] The physical mechanisms underlying the absorption of 1.55 µm light remain unclear. However, the superlinear power dependence 14,15 of the dc photocurrent and its increase with the reduction of the spot size show that an efficient absorption of 1.55 µm light is obtained because of the large optical peak intensity (∼100 W/µm 2 ) provided by the laser pulses focused into a near-diffraction-limited spot. At low intensity continuous wave (CW) illumination, the absorption in post-growth annealed LT-GaAs is indeed very low, and no quantitative data are present in the literature.…”

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confidence: 99%

Resonant cavities for efficient LT-GaAs photoconductors operating at λ = 1550 nm

et al. 2016

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We show that photoconductors based on low-temperature-grown GaAs (LT-GaAs) can be efficiently operated by 1.55 μm telecom wavelength by using metallic mirror based optical cavities. Two different semi-transparent front mirrors are compared: the first one is a thin gold layer, whereas the second one consists of a gold grating. Light absorption in grating mirror based optical cavities is numerically, analytically, and experimentally investigated allowing for an appropriate optical design. We show a 3 times improvement of the LT-GaAs photoconductor photoresponse by using, as front mirror, the gold grating once compared with the thin gold layer. It reaches around 0.5 mA/W under continuous wave, whereas a transient photoresistivity (Ron) as low as 5 Ω is deduced from dc photocurrents measured under femtosecond pulsed laser excitation. This work paves the way to efficient and reliable optoelectronics systems for GHz or THz waves sampling driven by 1.55 μm pulsed lasers widely available.

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“…The below band-gap absorption in LTG-GaAs is achieved by utilizing a mid-gap defect state to conduct band transitions. However, the small below-bandgap absorption constant results in low quantum efficiency ( 0.6 mA/W) for traditional vertical-illuminated PD structure [50], [51]. However, an MSM-TWPD structure can have reasonable quantum efficiency by properly increasing the device absorption length.…”

Section: B Msm-twpd Characteristicsmentioning

confidence: 99%

Traveling-Wave Photodetectors With High Power–Bandwidth and Gain–Bandwidth Product Performance

Lasaosa

Shi

Pasquariello

et al. 2004

IEEE J. Select. Topics Quantum Electron.

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Abstract-Traveling-wave photodetectors (TWPDs) are an attractive way to simultaneously maximize external quantum efficiency, electrical bandwidth, and maximum unsaturated output power. We review recent advances in TWPDs. Record high-peak output voltage together with ultrahigh-speed performance has been observed in low-temperature-grown GaAs (LTG-GaAs)-based metal-semiconductor-metal TWPDs at the wavelengths of 800 and 1300 nm. An approach to simultaneously obtain high bandwidth and high external efficiency is a traveling-wave amplifier-photodetector (TAP detector) that combines gain and absorption in either a sequential or simultaneous traveling-wave structure.

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Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe

Cited by 130 publications

References 9 publications

THz radiation sensors

THz radiation sensors

Resonant cavities for efficient LT-GaAs photoconductors operating at λ = 1550 nm

Traveling-Wave Photodetectors With High Power–Bandwidth and Gain–Bandwidth Product Performance

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