adecuada en una célula multiunión. Posteriormente, hemos realizado la transferencia e integración de grafeno en una célula de triple unión así como su análisis y comparación respecto al mismo xi tipo de célula sin grafeno. Uno de los resultados de este trabajo ha sido una solicitud de patente sobre células solares multiunión de semiconductores III-V que incorporen grafeno.xiii Abstract Concentration Photovoltaic (CPV) technology has been growing up intensively since the early 2000s. In particular, GaInP/GaInAs/Ge lattice matched triple junction solar cells are still dominating the CPV market. This thesis has focused on the investigation of this kind of multijunction solar cells aiming at further developing the basic technology previously developed in the III-V Semiconductor Group at the Solar Energy Institute of the Technical University of Madrid (IES-UPM). The different aspects that have been tackled in order to enhance the efficiency of this structure begin with the Ge substrate, which supports the rest of the structure, up to the incorporation of graphene on top of the device to serve as a transparent electrode.Firstly, the epitaxial growth of III-V materials on Ge substrates is considered. Ge contamination along the semiconductor layers is of special interest, since the non-intentional incorporation of Ge in the active layers will have a detrimental effect on their properties. In this study, attention has been paid not only to the Ge solid-state diffusion that takes place at the first epitaxial layers next to the III-V/Ge heterointerface, but also to the incorporation of Ge from the gas phase during the epitaxial growth by Metalorganic Vapor Phase Epitaxy (MOVPE). Thus, the influence of different conditions and growth parameters are analyzed with the purpose of finding the best combination of process parameters to mitigate this effect.Following with the device optimization, three main aspects detected as possible improvement mechanisms had been addressed. On the one hand, the VOC of the Ge bottom cell is lower than expected, due to the accumulated thermal load of the growth of the rest of the MJSC structure.With the aim of mitigating such thermal load and improving this VOC, several III-V on Ge nucleation strategies are studied. In particular, this Thesis presents a new nucleation routine of the GaInP nucleation layer and the GaInAs buffer layer where special attention has been paid to minimize their contribution to the thermal load in terms of thickness (i.e. growth time) and temperature.The following step is the optimization of the GaInP subcell. Ensuing with the use of Sb as surfactant during the growth of the GaInP base, in this Thesis the GaInP subcell is further Chapter 1