Scalable
synthesis of two-dimensional gallium (2D-Ga) covered by
graphene layers was recently realized through confinement heteroepitaxy
using silicon carbide substrates. However, the thickness, uniformity,
and area coverage of the 2D-Ga heterostructures have not previously
been studied with high-spatial resolution techniques. In this work,
we resolve and measure the 2D-Ga heterostructure thicknesses using
scanning electron microscopy (SEM). Utilizing multiple correlative
methods, we find that SEM image contrast is directly related to the
presence of uniform bilayer Ga at the interface and a variation of
the number of graphene layers. We also investigate the origin of SEM
contrast using both experimental measurements and theoretical calculations
of the surface potentials. We find that a carbon buffer layer is detached
due to the gallium intercalation, which increases the surface potential
as an indication of the 2D-Ga presence. We then scale up the heterostructure
characterization over a few-square millimeter area by segmenting SEM
images, each acquired with nanometer-scale in-plane resolution. This
work leverages the spectroscopic imaging capabilities of SEM that
allows high-spatial resolution imaging for tracking intercalants,
identifying relative surface potentials, determining the number of
2D layers, and further characterizing scalability and uniformity of
low-dimensional materials.