Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

Kim, Honggyu; Meng, Yifei; Kwon, Jung‐Dae; Rouvière, J. L.; Zuo, Jian

doi:10.1107/s2052252517016219

Cited by 7 publications

(3 citation statements)

References 29 publications

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“…The presence of point defects is usually inferred from indirect measures such as lattice distortions. 9 Although it is conceivable that they could be detected in tomographic reconstructions, it would be challenging to distinguish atoms close in atomic number, 10 and in general, it would not be possible to distinguish substitutional from interstitial impurity atoms.…”

Section: Introductionmentioning

confidence: 99%

Identification of point defects using high-resolution electron energy loss spectroscopy

et al. 2019

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Although there are many techniques that can detect bandgap states associated with point defects in the lattice, it is not routinely possible to determine the type of defect at submicron spatial resolution. Here we show that high-resolution electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope can locate and identify point defects with a resolution of about 10nm in a wide-bandgap BAlN semiconductor. B interstitials, N vacancies, as well as other point defects have been experimentally detected using EELS and have been identified using density functional theory.

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Section: Introductionmentioning

confidence: 99%

Identification of point defects using high-resolution electron energy loss spectroscopy

et al. 2019

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“…The characterization of disorder remains a perennial challenge in the structural science of materials. The work of Kim et al (2018) provides a very significant contribution to this field. They report on atomic resolution strain analysis for vacancy detection in InAs/ GaSb strained super-lattices with high-angle annular-dark-field (HAADF) imaging in a scanning transmission electron microscope (STEM).…”

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confidence: 99%

The structural science of functional materials

Catlow

2018

Int Union Crystallogr J

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The growing complexity of many classes of functional materials poses major challenges to structural science to which technical developments and the increasingly predictive power of computation make key contributions. These themes are clearly illustrated by the articles published in the field during the last year and especially by those in IUCrJ.An excellent illustration of the complexity of structural problem that is now being investigated in materials science is provided by the work of Zhang, Zhang et al. (2017), who examine the structural features of the martensitic transformation in Ni/Mn/Sb intermetallic compounds. The properties of such alloys are modified and can be optimized by the transformation, which alters the microstructure. The study uses scanning electron microscopy/electron back diffraction to chart the fascinating structural organizations that are induced, providing detailed structural models of these complex and intriguing transitions. The theme of phase transitions in intermetallics is also taken up in the paper of Li et al. (2018), who examine Mn/Co/Ni/Sn melt-spun ribbons and link phase behaviour to magneto-caloric properties; while the impact in this field of computation is apparent from the study of Wang et al. A field in which complexity has been long recognized is that of perovskite-structured materials, especially relating to the rich phase behaviour of compounds based on this versatile structural type. The lead zirconate/titanate solid solution (PZT) has been intensively studied over several decades, owing both to the subtlety of its structural properties and to the very wide ranging applications arising from its piezoelectric behaviour. New insight into structural changes and phase relations is provided by the study of Zhang, Yokota et al. (2017). Using a pair-distribution-function analysis based on neutron data, this paper shows how the local structure in PZT controls the long-range average structure across the so-called morphotropic phase boundary; and the analysis discovers a new monoclinic M C type structure. In addition, the role of polarization rotation in increasing the piezoelectric properties is analysed. Fig. 1 gives a diagrammatic illustration of the Pb polarization rotation paths that are revealed by the study.The paper represents a particularly elegant example of the elucidation of structureproperty relations in current materials science; while the continuing challenges posed by perovskite-structured materials is also illustrated in the work of Kang et al. (2017), which discovers new and unexpected spin configurations in magnetic phase transitions in Mndoped SmFeO 3 .The theme of structural changes during phase transitions again forms the basis of the work of Matvienko et al. (2017), which returns to structural changes during martensitic transitions and examines the role that optical microscopy can play in elucidating the mechanisms of transition by monitoring the interface migration and change in crystal shape during a transition. The approach is illustrated by the change...

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“…This talk will first review high resolution and high sensitivity electron beam techniques for strain characterization in nanodevices and device materials. Examples include planar and a finfet transistors and III-V heterostructures [6,7]. We then propose new SEND approaches and algorithms for high resolution and high sensitivity strain mapping, which will be demonstrated using a combination of experimental data and multislice simulations [8].…”

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Developing High Resolution and High Precision Strain Mapping Methodologies for Materials Research and Semiconductor Technology

et al. 2018

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Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

Cited by 7 publications

References 29 publications

Identification of point defects using high-resolution electron energy loss spectroscopy

Identification of point defects using high-resolution electron energy loss spectroscopy

The structural science of functional materials

Developing High Resolution and High Precision Strain Mapping Methodologies for Materials Research and Semiconductor Technology

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