Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions

Abstract

Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films J. Appl. Phys. 112, 073514 (2012) Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures J. Appl. Phys. 112, 074501 (2012) Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC J. Appl. Phys. 112, 063717 (2012) Investigation of defect levels in Cs2Hg6S7 single crystals by photoconductivity and photoluminescence spectroscopies J. Appl. Phys. 112, 063702 (2012) Flat bands near Fermi level of topological line defects on graphite A method to deduce energy distributions of defects in the band gap of a semiconductor by measuring the complex admittance of a junction is proposed. It consists of calculating the derivative of the junction capacitance with respect to the angular frequency of the ac signal corrected by a factor taking into account the band bending and the drop of the ac signal over the space charge region of the junction. Numerical modeling demonstrates that defect distributions in energy can be reconstructed by this method with high accuracy. Defect distributions of polycrystalline Cu͑In,Ga͒Se 2 thin films are determined by this method from temperature dependent admittance measurements on heterojunctions of Cu͑In,Ga͒Se 2 with ZnO that are used as efficient thin film solar cells.

Kinetics of occupancy of defect states in poly(3-hexylthiophene):fullerene solar cells

“…will be able to contribute to the junction capacitance [22,23]. Here T k B corresponds to the thermal energy and 0  denotes a characteristic frequency, and…”

“…1). The density of defect states (DOS) ) (E g t was stated to be related to the derivative of the capacitance with respect to the frequency as [22],…”

Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

“…TAS is a well-established, effective technique for characterizing both shallow and deep defects, which has been broadly applied in understanding defects in thin film 27,28 and organic solar cells 29 . The energetic profile of trap density of states (tDOS) can be derived from the angular frequency dependent capacitance using the equation: 30…”

Capacitance–voltage spectroscopy and analysis of dielectric intrinsic amorphous silicon thin films

“…More information about the method and technology of CV spectroscopy itself are also given in the above mentioned references [1][2][3][4][5].…”

“…1 Introduction Capacitance-voltage (CV) spectroscopy of a metal-insulator-semiconductor (MIS) allows quantifying the number of defects (N D ) in the insulator bulk as well as at the insulator/semiconductor interface [1][2][3][4][5]. In the field of photovoltaics (PV) the CV characterization method is commonly used to analyze materials for surface passivation of crystalline silicon (c-Si).…”