Determination of silicon unit cell parameters by precision measurements of Bragg plane spacings

Siegert, H.; Becker, Peter; Seyfried, P.

doi:10.1007/bf01306634

Cited by 28 publications

(7 citation statements)

References 5 publications

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“…This has been overcome due to recent measurements of Deslattes with an improved apparatus. First, results presented at the Conference on Precision Electromagnetic Measurements in 1986 (CPEM/ 86) [3] indicate that the NBS-PTB difference is reduced to below 2 X 10-7 d 220 • This agrees well with results of lattice spacing comparisons [4] and investigations of the unit cell volume of slightly deformed crystals [5] performed at PTB, which have shown that V o can be considered constant within a few parts in 10 7 . But in contrast to Vo, density and molar mass vary from crystal to crystal up to dp / p = dM / M~10-5 , e.g., Tilles [6].…”

supporting

confidence: 79%

The Avogadro constant — Recent results on the molar volume of silicon

Seyfried

Balhorn

Kochsiek

et al. 1987

IEEE Trans. Instrum. Meas.

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The density p of two silicon crystals has been determined by precision hydrostatic weighing, based on very accurate solid density standards (SDS's). Densities of additional crystals were gained from density differences measured by the temperature-of-f1oatation method. The molar mass M of the crystals was determined by comparing the isotopic abundances against the known abundances of the National Bureau of Standards (NBS) reference material SRM 990 using activation analysis and mass spectroscopy. Combining the measured values for M and p leads to M / p = (12.058 822 ± 0.000 013) cnr' / mol. With the known volume of the unit cell the following value for the Avogadro constant was calculated: N A = (6.022 137 ± 0.000 007) x 10 23 mol-I.

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supporting

confidence: 79%

The Avogadro constant — Recent results on the molar volume of silicon

Seyfried

Balhorn

Kochsiek

et al. 1987

IEEE Trans. Instrum. Meas.

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“…where: R Si is the Si covalent atomic radius = 0.118 nm [10], R B is the B covalent atomic radius = 0.084 nm [7], and N is the density of lattice sites = 4.99 × 10 22 cm -3…”

Section: Resultsmentioning

confidence: 99%

Lattice parameter measurements of boron doped Si single crystals

Kucytowski

Wokulska²

2005

Cryst. Res. Technol.

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The influence of boron dopants and oxygen impurity on lattice parameters of Si single crystals is studied. Concentrations of boron and oxygen were determined by the Bond method. A linear contraction of the crystal lattice was observed due to high boron doping of Si single crystals. Lattice parameters of Si single crystals increased below the lower limit boron concentration N B = 2.1 × 10 16 cm -3. This proves the presence oxygen at low boron concentrations. In highly boron-doped Si single crystals no oxygen influence on lattice parameter change was observed.

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“…The two results differ by more than 7 times the uncertainty of their difference, so that it is unjustified to keep both of them in the same adjustment. Additional measurements at PTB (Becker, Seyfried, and Siegert, 1982;Siegert, Becker, and Seyfried, 1984) have confirmed the quoted PTB precision, while work at NBS has verified that the Si crystals used by PTB and by NBS have the same lattice spacing to within 0.4 ppm (Deslattes and Henins, 1984). The 0.23 ppm uncertainty implied by this limit of error is the major contributor to the uncertainty assigned to the PTB determination, although it actually applies not to the PTB measurement itself but to the precision with which the result can be related to the NBS silicon molar volume determination (see below).…”

Section: Type Gyromagnetic Ratio (Low Field)mentioning

confidence: 99%