Lattice parameter measurements of boron doped Si single crystals

Kucytowski, J.; Wokulska, K.

doi:10.1002/crat.200410361

Cited by 31 publications

(19 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both crystal strain effects and electronic effects should be considered with regards to the mechanism of enhanced oxygen transport in highly boron doped Cz-Si. A high boron concentration generally causes the contraction of the silicon lattice 24 together with a short range distortion of the lattice around individual boron atoms, and this could affect the diffusion of oxygen. However, a high level of antimony doping would also introduce a lattice strain ͑in this case tensile͒ and the results presented in this work show that doping Cz-Si with a high concentration of antimony does not affect oxygen transport.…”

Section: Discussionmentioning

confidence: 99%

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon

Murphy

Wilshaw

Pygall

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

The locking of dislocations by oxygen has been investigated experimentally in Czochralski silicon ͑Cz-Si͒ with different concentrations of shallow dopants. Specimens containing well-defined arrays of dislocation half-loops were subjected to isothermal anneals in the 350-550°C temperature range, and the stress required to bring about dislocation motion at 550°C was then measured. This dislocation unlocking stress was found to increase with annealing time due to oxygen diffusion to the dislocation core. The dislocation unlocking stress was measured in n-type Cz-Si with a high antimony doping level ͑ϳ3.4ϫ 10 18 cm −3 ͒ and p-type Cz-Si with a low boron doping level ͑ϳ1.3ϫ 10 15 cm −3 ͒. An analysis of the data taking the different oxygen concentrations into account showed that the rate of increase in dislocation unlocking stress was unaffected by the high level of antimony doping. This indicates that a high antimony doping level has no significant effect on oxygen transport for the conditions used in this experiment. However, in p-type Cz-Si with a high boron doping level ͑ϳ5.4ϫ 10 18 cm −3 ͒, the dislocation unlocking stress was found to rise at a much faster rate than in Cz-Si with a low boron doping level or high antimony doping level. This enhancement in dislocation locking was by a factor of approximately 60 at 400°C. By performing a numerical simulation to solve the diffusion equation for oxygen transport to a dislocation, the effective diffusivity of oxygen was deduced from the dislocation unlocking data to be 2.7 ϫ 10 −6 exp͑−1.4 eV/ kT͒ cm 2 s −1 in the highly boron doped Cz-Si. In the temperature range studied, the effective diffusion coefficient in the highly boron doped Cz-Si was found to be approximately 44 times higher than expected in low boron doped Cz-Si with an identical oxygen concentration.

show abstract

Section: Discussionmentioning

confidence: 99%

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon

Murphy

Wilshaw

Pygall

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Thus the size contribution from Eqs. [45][46][47]. On the other hand, in the above mentioned Si:Ga case [6] a v is determined to be negative.…”

mentioning

confidence: 88%

Experimental doping dependence of the lattice parameter inn-type Ge: Identifying the correct theoretical framework by comparison with Si

Senaratne

Kouvetakis

et al. 2016

Phys. Rev. B

View full text Add to dashboard Cite

“…A high boron concentration puts the silicon lattice into compression [26] and this could have an affect on oxygen diffusion. However, a high level of antimony doping would conversely introduce a tensile lattice strain and the results presented here do not show that doping Cz-Si with a high concentration of antimony affects oxygen transport.…”

Section: Cz-si With a High Shallow Dopant Concentrationmentioning

confidence: 99%