Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors

Petterson, M.; Hurley, Robert F.; Arya, K.; Betancourt, C.; Bruzzi, M.; Colby, B.; Meyer, C.; Pixley, J. H.; Rice, Theodore R.; Sadrozinski, H. F-W.; Scaringella, M.; Bernardini, J.; Borrello, L.; Fiori, F.; Messineo, A.

doi:10.1109/tns.2009.2033995

Cited by 10 publications

(5 citation statements)

References 15 publications

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“…The high atomic displacement threshold energy of 4H-SiC suggests enhanced irradiation hardness [13]. However, the measured radiation hardness proves inferior to comparable epitaxial p-on-n Si samples where the CCE reaches 67.7% at a neutron irradiation of 2.55 × 10 15 n eq /cm 2 , albeit measured at a temperature between −20 • C and −30 • C [29]. One reason might be the high impurity of the employed substrate, about two orders of magnitude higher than for typical Si tracking detectors.…”

Section: Discussionmentioning

confidence: 82%

Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

et al. 2023

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The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up effects. Additionally, as radiation hardness requirements grow more demanding in the context of future high luminosity high energy physics experiments, wide-bandgap materials such as 4H-SiC could offer better performance due to low dark currents and higher atomic displacement thresholds. In this work, the detector performance of 50 µm thick 4H-SiC p-in-n planar pad sensors was investigated at room temperature, using an 241Am alpha source at reverse biases of up to 1100 V. Samples subjected to neutron irradiation with fluences of up to 1 × 1016 neq/cm2 were included in the study in order to quantify the radiation hardness properties of 4H-SiC. A calibration of the absolute number of collected charges was performed using a GATE simulation. The obtained results are compared to previously performed UV transient current technique (TCT) studies. Samples exhibit a drop in charge collection efficiency (CCE) with increasing irradiation fluence, partially compensated at high reverse bias voltages far above full depletion voltage. At fluences of 5 × 1014 neq/cm2 and 1 × 1015 neq/cm2, CCEs of 64 % and 51 % are obtained, decreasing to 15 % at 5 × 1015 neq/cm2. A plateau of the collected charges is observed in accordance with the depletion of the volume the alpha particles penetrate for an unirradiated reference detector. For the neutron-irradiated samples, such a plateau only becomes apparent at higher reverse bias, roughly 600 V and 900 V for neutron fluences of 5 × 1014 neq/cm2 and 1 × 1015 neq/cm2. For the highest investigated fluence, CCE behaves almost linearly with increasing reverse bias. Compared to UV-TCT measurements, the reverse bias required to deplete a sensitive volume covering full energy deposition is lower, due to the small penetration depth of the alpha particles. At the highest reverse bias, the measured CCE values agree well with earlier UV-TCT studies, with discrepancies between 1% and 5%.

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Section: Discussionmentioning

confidence: 82%

Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

et al. 2023

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“…The accumulation in more recent years of charge collection measurements from heavily irradiated silicon detectors has confirmed the larger than expected signal (see e.g. [3][4][5][6][7][8][9]). In particular, a number of results have been produced within the framework of the CERN-RD50 collaboration, dedicated to the development of radiation hard detectors for future super-collider applications [10].…”

Section: Introductionmentioning

confidence: 91%

Charge Muliplication in Highly Irradiated Planar Sensors

Casse¹

2011

Proceedings of 19th International Workshop on Vertex Detectors — PoS(VERTEX 2010)

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The discovery of the novel effect that amplifies the charge generated by ionising particles in heavily irradiates silicon detectors has risen hopes for further extending the lifetime of this type of sensors when exposed to heavy doses of hadron irradiation. The anomalous size (compared to expectations) of the signal generated by a minimum ionising particle (mip) in detectors irradiated to doses about one order of magnitude higher than what anticipated for the current Large Hadron Collider (LHC) at CERN has been reported for a number of years. It is now well documented that the correct interpretation for the improvement of the charge collection resides in the multiplication of the signal charge by impact ionisation. This effect is being intensively studied within the high energy physics detector community by mean of both experiments and simulations. The results of these studies are particular relevant to the silicon detectors planned for the future super LHC (sLHC) and for every silicon sensor that will be intended for very hostile environment, where the final cumulated flux will reach level of a few times 10 16 1MeV neutron equivalent (n eq ) cm -2 . A summary of the current results and the understood implications and limitations of this effect are here discussed. PoS(VERTEX 2010)020Charge multiplication in highly irradiated planar silicon sensors Gianluigi Casse

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“…Measurements at very high bias voltages have shown that charge multiplication phenomena [13]- [19] must be taken into account to understand the surprisingly good performance of heavily irradiated detectors. In addition to good charge collection efficiency (CCE) measured after "beneficial" annealing, CCE in n + -p type detectors is also less severely affected by long term reverse annealing than in the case of p + -n-type detectors [3,20,21]. Moreover, at sufficiently high bias voltages, significant increase of collected charge with reverse annealing was observed [20].…”

Section: Jinst 6 P11008mentioning

confidence: 99%

“…Pions will constitute a significant part of the radiation field in the upgraded LHC [1], the so called High Luminosity LHC (HL-LHC). Depending largely on the distance from the interaction point, they may contribute from less than 10% to displacement damage of the silicon strip detectors at largest radii rising up to ∼90% at inner layers of pixel detectors [2,3]. The remaining part of the damage will be caused by neutrons back-splashing from calorimeters and, to a lesser extent, protons.…”

Section: Introductionmentioning

confidence: 99%

Accelerated annealing of n⁺-p strip detectors irradiated with pions

et al. 2011

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Charge collection measurements with silicon detectors with implanted n-type readout strips in p-type silicon bulk (n + -p) are presented. Detectors were irradiated with 191 MeV pions at the Paul Scherrer Institute (PSI) in Villigen in Switzerland. Signals induced by electrons from 90 Sr source were measured with SCT128 chip. Collected charge and detector current were measured after several annealing steps summing up to over 10000 minutes at 60 ˚C. It was observed that irradiation of these detectors with pions results in only ∼30% of the increase of V fd seen after irradiation with neutrons to the same NIEL equivalent fluence. Charge multiplication effects in pion irradiated detectors were seen only after long accelerated annealing time. Both effects are consistent with smaller space-charge introduction rates after irradiation with charged hadrons, characteristic for oxygenated detector material. It was confirmed that, at sufficient bias voltage, reverse annealing after pion irradiation does not represent a problem for application of these detectors in trackers at upgraded LHC.

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Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors

Cited by 10 publications

References 15 publications

Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

Charge Muliplication in Highly Irradiated Planar Sensors

Accelerated annealing of n⁺-p strip detectors irradiated with pions

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Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors

Cited by 10 publications

References 15 publications

Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

Charge Muliplication in Highly Irradiated Planar Sensors

Accelerated annealing of n+-p strip detectors irradiated with pions

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Product

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Accelerated annealing of n⁺-p strip detectors irradiated with pions