Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements

Zhou, Guangnan; Zeng, Fanming; Jiang, Yang; Wang, Qing; Jiang, Lingli; Xia, Guangrui; Yu, Hongyu

doi:10.1109/ted.2021.3057007

Cited by 18 publications

(10 citation statements)

References 24 publications

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“…The device survives only about 10 s at V GS,stress of 11 V but extends to 1000 s at V GS,stress of 9.5 V. The gate breakdown mechanisms include Schottky diode D1 and passivation-related breakdowns. 16 The Schottky diode breakdown is attributed to the long-time hole injection from the avalanche effect, which causes the Schottky diode to degenerate into a resistance (R p-GaN ). On the other side, the passivation-related breakdown is owing to the high gate bias, which ensures a high electric field around the p-GaN mesa and deteriorates the interface between the p-GaN layer and passivation.…”

Section: Experiments and Discussionmentioning

confidence: 99%

“…Some works have presented that the gate breakdown originated from the high electric field under high positive gate bias, resulting in the percolation between the p-GaN layer and passivation. 16 Meanwhile, the others have proposed that the metal/p-GaN junction breakdown after high gate bias stress. 17 Cheng et al found the impact of ionizationinduced off-state breakdown at the source-terminated field plate edge.…”

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confidence: 99%

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Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias

Qin¹,

Chen²,

Lo³

et al. 2022

ECS J. Solid State Sci. Technol.

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This study investigates the gate degradation mechanisms of Schottky p-GaN gate high electron mobility transistors (HEMTs) systemically. The constant gate bias stress is applied to investigate the gate breakdown. Schottky p-GaN Gate HEMTs show a shorter gate lifetime as gate bias increases. The gate leakage current after gate breakdown shows a resistance-like characteristic. The equivalent circuit has been proposed to discuss the gate breakdown mechanisms. When applying a high gate bias for a long time, the high electric field will damage the p-GaN gate and passivation interface and generate the percolation path. The primary gate breakdown happens between the gate and source and results in a resistance-like I-V characteristic.

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Section: Experiments and Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias

Qin¹,

Chen²,

Lo³

et al. 2022

ECS J. Solid State Sci. Technol.

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“…The reduced I DS represents an increase in the dynamic R ON -known as current collapse or R ON dispersion, respectively-and has emerged as a critical issue in high-voltage devices [405]. To suppress current collapse, the introduction of surface passivation combined with a FP has been proposed to reduce the surface state density and modulate distribution of the electric field at the drain edge of the gate (figure 16(b)) [406][407][408].…”

Section: Passivation and Fp Engineeringmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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“…Finally, from the various reports on the time-dependent breakdown of SP-HEMT [39], [125], [226]- [235], the failure mechanism remains contentious [235]. While all reports show the failure of devices with an increase in gate leakage current, some reports claim that the failure is caused by the high electric field in the metal/p-GaN Schottky junction or AlGaN barrier layer [126], [226], [234], [236], while others have credited the failure to the generation of a percolation pathway [228]- [232], [237].…”

Section: A Gate Lifetimementioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

109

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements

Cited by 18 publications

References 24 publications

Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias

Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Stability, Reliability, and Robustness of GaN Power Devices: A Review

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