Determination of the local electric field strength by Energy dispersive Photon Emission Microscopy

Geinzer, T.; Heiderhoff, R.; Phang, J.C.H.; Balk, L.J.

doi:10.1109/irps.2010.5488819

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…Local electron temperature distribution within state-of-the-art processors and integrated circuits can be characterized with nanometer resolution by Scanning Near-Field Photon Emission Microscopy (SNPEM) using a Scanning Near-field Optical Microscope (SNOM) [10]. To get access to the electric field strength the charge carrier temperature is determined more efficiently by energy-dispersive PEM (EDPEM) resulting in a better accuracy and higher signal to noise ratio [11] in comparison to conventional spectral respectively wavelength-dispersive measurements.…”

Section: Complementary Sem and Spm Analysismentioning

confidence: 99%

Advanced SEM/SPM microscopy

Heiderhoff

2012

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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Advanced SEM/SPM microscopy will expand the application fields in failure analysis and reliability investigation, because the recognition of defects and their subsequent characterization have to be carried out with highest spatial resolution to ensure that even smallest structures with modified material properties can be evaluated. Promising for future applications is the fact that the used probes simultaneously can either be used as sensors, giving access to a vast variety of material properties, or as actuators, which can deliberately modify samples properties.

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Section: Complementary Sem and Spm Analysismentioning

confidence: 99%