Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by C-V profiling

Abstract

The valence and conduction band discontinuities for the lattice matched (Ga,In)P/GaAs heterojunction have been determined by capacitance-voltage (C-V) profiling. Both p-p and n-n heterojunctions were profiled, in order to obtain separate and independent values for both the valence-band-edge discontinuity (ΔEv) and the conduction-band discontinuity (ΔEc). The band lineup is found to be of the straddling type with the valence- and conduction-band discontinuities 0.24 and 0.22 eV, respectively, with an estimated accuracy of ±10 meV. Computer reconstruction of the C-V profiles was used to check the consistency of the data. The band offset data indicate that the (Ga,In)P/(Al,Ga)As system should be staggered for a certain range of Al compositions.

Material properties of dilute nitrides: Ga(In)NAs and Ga(In)NP

“…This result is similar to previous reports based on the C-V profile method [12,13]. With 0.5% nitrogen incorporation into Ga 0.46 In 0.54 P barrier, the DE c and DE v become 371% and 9771% of total bandgap difference (204 meV), respectively.…”

“…Low-temperature PL for 8-period Ga 1Àx In x N y P 1Ày /GaAs samples. The well thickness is 5 nm [12]. Fig.…”

Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques

“…In the evaluation of ⌬E C and i , the heterointerface position was assumed to be the peak position in the obtained apparent carrier profile. Rao et al 10 pointed out that this interface position is an important factor in evaluating ⌬E C and i values and is critical when there is substantially different doping concentrations in the two layers that compose the heterojunction. In the experiments of Rao et al the concentration ratio was 3:13, for which the obtained ⌬E C and i values were functions of the heterointerface position.…”

Determination of Al mole fraction for null conduction band offset in In0.5Ga0.5P/AlxGa1−xAs heterojunction by photoluminescence measurement

“…8 It is well known that In 0.5 Ga 0.5 P/GaAs has a straddling band alignment, where both conduction and valence bands of InGaP encompass those of GaAs, although the value of the band offset has been controversial. [9][10][11][12][13][14][15][16] So the band alignment type of the In 0.5 Ga 0.5 P/Al x Ga 1Ϫx As heterojunction is expected to shift from a straddling alignment to a staggered one as the Al content increases from GaAs. Since the physical property of a heterojunction strongly depends on the band alignment structure, the determination of the Al mole fraction for the transition of band alignment type is very important for device applications especially for heterojunction bipolar transistors.…”