Developing a fuzzy-set-based shortcut layout approach for a semiconductor inter-bay handling system

Su, Teng-Sheng; Hsiao, Han-Hsin

doi:10.1007/s00170-020-06150-8

“…MRR was calculated from equation ( 15) by setting m=[-5,-4,-3,-2,-1], n= [1,2,3,4,5], RB= [15,30,45,60,75].…”

Section: Methodsmentioning

confidence: 99%

“…Development of semiconductor industry has been closely related to the national defense, military, aerospace, energy and other important areas of science and technology. [1,2] As the representative of the semiconductor material, silicon carbide (SiC) single crystal was an important new wide band gap semiconductor material, which can be used as a substrate for the growth of gallium nitride (GaN) and grapheme. [3][4][5] At the same time, it can be widely used in the production of high temperature, high frequency and high power devices.…”

Section: Introductionmentioning

confidence: 99%

Material Removal Rate of Double-faced Mechanical Polishing of 4H-SiC Substrate

Zhang

¹

,

Yang

²

,

Qiu

³

2021

Preprint

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Silicon carbide (SiC) has been a promising the-third-generation semiconductor power device material for high-power, high-temperature, substrate applications. It aims to improve the material removal rate (MRR), on the premise of ensuring the surface roughness requirements of the double-faced mechanical polishing of 6-inch SiC substrate. To obtain the relationship between any point on SiC substrate and polishing pads, the model about double-faced mechanical polishing has been built and the kinematics equations were created. Best optimized material removal rate parameters were obtained. MRR reached the maximum when speed rate of the outside ring gear to the inside sun gear m=-1, speed rate of lower plate to the inside sun gear n=5, SiC substrate distribution radius RB=75. The primary and secondary order of MRR (n>m>RB) was obtained. An accurate mathematical model of orthogonal rotary regression test of Tri-factor quadratic of MRR was established and the regression model was significant. Surface quality of SiC substrate was observed and characterized with SEM and AFM. It greatly provides a key guarantee for the next process of CMP, confirmed the importance of MRR to ultra-smooth polishing, and provides a guarantee for its application in semiconductor equipment and technology.

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“…MRR was calculated from equation ( 15) by setting m=[-5,-4,-3,-2,-1], n= [1,2,3,4,5], RB= [15,30,45,60,75].…”

Section: O2mentioning

confidence: 99%

“…Development of semiconductor industry has been closely related to the national defense, military, aerospace, energy and other important areas of science and technology. [1,2] As the representative of the semiconductor material, silicon carbide (SiC) single crystal was an important new wide band gap semiconductor material, which can be used as a substrate for the growth of gallium nitride (GaN) and grapheme. [3][4][5] At the same time, it can be widely used in the production of high temperature, high frequency and high power devices.…”

Section: Introductionmentioning

confidence: 99%

Material removal rate of double-faced mechanical polishing of 4H-SiC substrate

Zhang

¹

,

Yang

²

,

Qiu

³

2021

Int J Adv Manuf Technol

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Silicon carbide (SiC) has been a promising the-third-generation semiconductor power device material for high-power, high-temperature, substrate applications. It aims to improve the material removal rate (MRR), on the premise of ensuring the surface roughness requirements of the double-faced mechanical polishing of 6-inch SiC substrate. To obtain the relationship between any point on SiC substrate and polishing pads, the model about double-faced mechanical polishing has been built and the kinematics equations were created. Best optimized material removal rate parameters were obtained. MRR reached the maximum when speed rate of the outside ring gear to the inside sun gear m=-1, speed rate of lower plate to the inside sun gear n=5, SiC substrate distribution radius RB=75. The primary and secondary order of MRR (n>m>RB) was obtained. An accurate mathematical model of orthogonal rotary regression test of Tri-factor quadratic of MRR was established and the regression model was significant. Surface quality of SiC substrate was observed and characterized with SEM and AFM. It greatly provides a key guarantee for the next process of CMP, confirmed the importance of MRR to ultra-smooth polishing, and provides a guarantee for its application in semiconductor equipment and technology.

show abstract

“…The uncertainty and fuzziness of the decision making environment make more suitable for DMs to express evaluation information with fuzzy information than with clear numbers. Fuzzy sets (FSs) [3] have become useful tools for expressing uncertainty information in GDM problems [4][5][6], and they have been applied in semiconductor inter-bay handling systems [7], green supply chain management [8,9], disease diagnosis [10][11][12], and many other fields [13,14]. Thus far, different extensions of FSs have been proposed.…”

Section: Introductionmentioning

confidence: 99%

A new group decision making approach based on incomplete probabilistic dual hesitant fuzzy preference relations

Song

¹

,

Ni

²

,

Jin

³

et al. 2021

Complex Intell. Syst.

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As an enhanced version of probabilistic hesitant fuzzy sets and dual hesitant fuzzy sets, probabilistic dual hesitant fuzzy sets (PDHFSs) combine probabilistic information with the membership degree and non-membership degree, which can describe decision making information more reasonably and comprehensively. Based on PDHFSs, this paper investigates the approach to group decision making (GDM) based on incomplete probabilistic dual hesitant fuzzy preference relations (PDHFPRs). First, the definitions of order consistency and multiplicative consistency of PDHFPRs are given. Then, for the problem that decision makers (DMs) cannot provide the reasonable associated probabilities of probabilistic dual hesitant fuzzy elements (PDHFEs), the calculation method of the associated probability is given by using an optimal programming model. Furthermore, the consistency level for PDHFPRs is tested according to the weighted consistency index defined by the risk attitude of DMs. In addition, a convergent iterative algorithm is proposed to enhance the unacceptable consistent PDHFPRs’ consistency level. Finally, a GDM approach with incomplete PDHFPRs is established to obtain the ranking of the alternatives. The availability and rationality of the proposed decision making approach are demonstrated by analyzing the impact factors of haze weather.

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Developing a fuzzy-set-based shortcut layout approach for a semiconductor inter-bay handling system

Cited by 5 publications

References 39 publications

Material Removal Rate of Double-faced Mechanical Polishing of 4H-SiC Substrate

Material Removal Rate of Double-faced Mechanical Polishing of 4H-SiC Substrate

Material removal rate of double-faced mechanical polishing of 4H-SiC substrate

A new group decision making approach based on incomplete probabilistic dual hesitant fuzzy preference relations

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