Development and deployment of advanced multi-beam mask writer

Chandramouli, Mahesh; Liu, Bin; Juday, Reid K.; Shamoun, Bassam; Korobko, Yulia; Sowers, A. T.; Tezuka, Yoshihiko; Abboud, Frank E.

doi:10.1117/12.2556552

Cited by 9 publications

(11 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While many different designs to multi-beam writing have been developed in the early 2000s [4], the design approach of IMS Nanofabrication was the only one succeeding being widely adopted by the industry since 2016 [5]. In 2022, NuFlare Technology (NFT) also released a multi-beam mask writer to the industry.…”

Section: Multi-beam Mask Writing the Fundamental Conceptmentioning

confidence: 99%

Multi-beam mask writing opens up new fields of application

Tomandl,

Spengler,

Klein

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

View full text Add to dashboard Cite

Section: Multi-beam Mask Writing the Fundamental Conceptmentioning

confidence: 99%

Multi-beam mask writing opens up new fields of application

Tomandl,

Spengler,

Klein

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

View full text Add to dashboard Cite

“…For example, direct writing systems are used for research and development of futuristic devices 1) and mask writing systems are used for advanced mask production. 2) Productivity and writing accuracy of the EB writing systems are very important factors, especially in mask production. In recent leading-edge mask manufacturing, two different methods are utilized: the single variable-shaped beam (SVSB) writing and the multi-beam (MB) writing.…”

Section: Introductionmentioning

confidence: 99%

Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this paper, development of NuFlare Technology’s multi-beam (MB) mask writing system MBM-2000 series is reviewed, and future plans for the MBM series are discussed. The MB mask writing systems were designed on the basis of unique concepts suitable for high-volume production of leading-edge masks, i.e., high beam current density, a reliable beam blanking aperture array (BAA) system with a 50-keV single-stage acceleration optics, high-speed inline pixel-level dose correction, and a distinctive hardware system for charging effect reduction. The latest MB mask writing system, MBM-2000PLUS, achieves a high throughput of 8.7 hours in a 104×130 mm2 writing area for a 150 μC/cm2 resist thanks to a high beam current density of 3.2 A/cm2. In addition, a global position accuracy of 1.2 nm, a local position accuracy of 0.5 nm, and a local critical dimension uniformity of 0.61 nm are achieved. The BAA system has shown long-term stable operation for more than one year. The high productivity and writing accuracy realized by NuFlare Technology’s concepts will contribute to further miniaturization of semiconductors.

show abstract

“…[5] MBMW has been adopted for EUV photomask production for the sub 10nm node applications. [6] Furthermore, writer tool makers have proposed new MBMW for the next generation. [7] Thus, EB resist must meet the demand for the highest resolution within the desired write times for the leading-edge mask production.…”

Section: Introductionmentioning

confidence: 99%

Study of EB resist dissolution contrast and chemical blur impact on the ultimate resolution

Yamamoto

Takahashi

Nagasaki

et al. 2022

Photomask Technology 2022

View full text Add to dashboard Cite

EB (electron beam) resist is widely used for the EUV (extreme ultraviolet) mask production. Tighter pitch size and smaller pattern features are required on EUV mask for the next generation EUV patterning. A novel, high dose, positive-tone chemically amplified resist (pCAR) using PHS (polyhydroxystyrene) based polymer has been developed with improved resolution performance as verified by Point-beam writer and Multi-beam mask writer (MBMW). In this study, several high dissolution contrast pCAR formulations were studied under Point-beam conditions to investigate the impact of the chemical blur and the chemical stochastics on lithographic performance. For suppressing the chemical blur in the pCAR after exposure, formulations using larger size PAG (photo acid generator) could improve the resolution performance due to reduced acid diffusivity. For reducing the chemical stochastics, higher PAG loading pCAR and the slower sensitivity pCAR were investigated. Improved resolution and LWR (line width roughness) performances were obtained by these pCAR up to approximately 200μC/cm2 under Point-beam condition. On the other hand, the lithographic performance was degraded at 270μC/cm2. Analytical results of PAG decomposition ratio by HPLC suggested the possibility that decreased acid generation contrast could degrade lithographic performance when the pCAR sensitivity is too slow. The investigation of different dissolution contrast pCAR showed that higher dissolution contrast pCAR with higher Rmax resulted in improved resolution performance. According to this study, efforts to minimize the chemical blur and stochastics, and to maximize the photoresist contrast were the key factors for designing high-performing, low sensitivity pCAR. The verification results of the ultimate resolution of the representative pCAR with 60nm film thickness were also described in this paper under MBMW and mask process conditions. HP21nm line and space pattern could be resolved without pattern collapse. The small ring pattern with a 10.5nm pattern width was nicely resolved as the smallest feature.

show abstract

Development and deployment of advanced multi-beam mask writer

Cited by 9 publications

References 0 publications

Multi-beam mask writing opens up new fields of application

Multi-beam mask writing opens up new fields of application

Recent progress and future of electron multi-beam mask writer

Study of EB resist dissolution contrast and chemical blur impact on the ultimate resolution

Contact Info

Product

Resources

About