Photomask Technology 2022 2022
DOI: 10.1117/12.2639980
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Study of EB resist dissolution contrast and chemical blur impact on the ultimate resolution

Abstract: EB (electron beam) resist is widely used for the EUV (extreme ultraviolet) mask production. Tighter pitch size and smaller pattern features are required on EUV mask for the next generation EUV patterning. A novel, high dose, positive-tone chemically amplified resist (pCAR) using PHS (polyhydroxystyrene) based polymer has been developed with improved resolution performance as verified by Point-beam writer and Multi-beam mask writer (MBMW). In this study, several high dissolution contrast pCAR formulations were … Show more

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“…Its shape is widely known and, therefore, easy to inspect for any irregularities. The mask blanks from HOYA were coated by HOYA with an advanced positive chemically amplified resist (pCAR) provided by FUJIFILM (Base-Dose @ 50% pattern density 155 μC/cm2 8 ).…”
Section: Multi-beam Mask Writing – Practical Writing Capabilitymentioning
confidence: 99%
“…Its shape is widely known and, therefore, easy to inspect for any irregularities. The mask blanks from HOYA were coated by HOYA with an advanced positive chemically amplified resist (pCAR) provided by FUJIFILM (Base-Dose @ 50% pattern density 155 μC/cm2 8 ).…”
Section: Multi-beam Mask Writing – Practical Writing Capabilitymentioning
confidence: 99%